A numerical study of dc characteristics of HEMT with p -type δ -doped barrier
Source abstract
Abstract
The dc characteristics of an InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) with a p-type δ-doped InGaP barrier are numerically investigated with the ISE-TCAD simulation program. The simulation results indicate that a HEMT with such a structure has a higher gate turn-on voltage, better carrier confinement that results in a lower voltage-dependent transconductance, and a larger breakdown voltage when compared with the typical HEMT. The simulation results also suggest that this structure is beneficial for linear and large-signal application.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design
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References (13)
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1. Y.W. Chen, W.C. Shu, S.M. Shieh, Y.J. Chen, Y.S. Lin, Y.J. Li, T.B. Wang: IEEE Trans. Electron Devices 49, 221 (2002)10.1109/16.981210 ↗
2. S.F. Yoon, B.P. Gay, H.Q. Zheng, H.T. Kam, J. Degenhardt: IEEE Trans. Electron Devices 47, 1115 (2000)10.1109/16.841249 ↗
3. Y.S. Lin, S.S. Lu, P.Z. Chang: J. Appl. Phys. 85, 2197 (1999)10.1063/1.369527 ↗
4. D. Geiger, E. Mittermeier, J. Dickmann, C. Geng, R. Winterhof, F. Scholz, E. Kohn: IEEE Electron Dev. Lett. 16, 259 (1995)10.1109/55.790728 ↗
5. J.H. Tsai: Electron Dev. Lett. 24, 1 (2003)10.1109/LED.2002.807024 ↗
6. W.C. Liu, K.H. Yu, K.W. Lin, J.H. Tsai, C.Z. Wu, K.P. Lin, C.H. Yen: IEEE Trans. Electron Devices 48, 1552 (2001)
7. W.S. Lour, J.H. Tsai, L.W. Laih, W.C. Liu: IEEE Trans. Electron Devices 43, 871 (1996)10.1109/16.502117 ↗
8. W.S. Lour, W.L. Chang, S.T. Young, W.C. Liu: Electron. Lett. 34, 814 (1998)10.1049/el:19980682 ↗
9. M. Nakamura, S. Wada, H. Kawasaki, M. Abe, I. Hase: Electron. Lett. 35, 336 (1999)10.1049/el:19990218 ↗
10. L.P. Sadwick, C.W. Kim, K.L. Tan, D.C. Streit: IEEE Electron Dev. Lett. 12, 626 (1991)10.1109/55.119219 ↗
11. S.C. Yang, H.C. Chiu, Y.J. Chan, H.H. Lin, J.M. Kou: IEEE Trans. Electron Devices 48, 2906 (2001)10.1109/16.974726 ↗
12. S. Sassen, B. Witzigmann, C. Wolk, H. Brugger: IEEE Trans. Electron Devices 47, 24 (2000)10.1109/16.817563 ↗
13. R.E. Thorne, S.L. Su, R.J. Fischer, W.F. Kopp, W.G. Lyons, P.A. Miller, H. Morkoc: IEEE Trans. Electron Devices 30, 212 (1983)10.1109/T-ED.1983.21102 ↗