Characteristics of SrBi2Ta2O9 ferroelectric films on Si using LaAlO3 thin film as an insulator

Metal–ferroelectric–insulator–semiconductor structures using LaAlO3 (LAO) layers as an insulating barrier have been investigated. LAO films were deposited on n-Si substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). SrBi2Ta2O9 (SBT) films were prepared as ferroelectric layers at a low processing temperature of 650 °C by a metalorganic decomposition method. The MOCVD-derived LAO buffer layer shows an amorphous structure, relatively high dielectric constant, and good electrical properties. Au/SBT/LAO/n-Si exhibits a larger counterclockwise C–V memory window of 3.7 V and a lower leakage-current density of 2.5×10-8 A/cm2 at an applied voltage of 10 V. It has been confirmed that the hysteresis loop is caused by ferroelectricity. The Auger electron spectrometry depth profile indicates that the introduction of the LAO buffer layer prevents the interfacial diffusion between SBT and the Si substrate effectively and improves the interface quality.