Low-Frequency Three-Terminal Charge Pumping Applied to Silicon Nanowire Field-Effect Transistors
Source abstract
Abstract
We report on the application of the charge-pumping (CP) technique to vapor-liquid-solid grown silicon nanowire (SiNW) transistors. We use an Ω gate-nanowire field-effect-transistor (OG-NWFET) structure, and we employ a modified CP method that is applicable to three terminal devices. The trap density from CP measurements correlates very well with the results obtained from subthreshold slope measurements. The relatively high trap densities measured and the observed saturation of the CP signal with the measurement frequency are discussed in terms of device dimensions and geometry.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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