Materials and device properties of pseudomorphic In x Ga1?x As/Al0.3Ga0.7As/GaAs high electron mobility transistors (0<x<0.5)
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (13)
Show source-provided references
1. A.A. Ketterson, W.T. Masselink, J.S. Gedymin, J. Klem, C.K. Peng, W.F. Kopp, H. Moorkoc, K.R. Gleason: IEEE Trans. ED-33, 564 (1986)10.1109/T-ED.1986.22533 ↗
2. J.W. Matthews, A.E. Blakeslee: J. Cryst. Growth 27, 118 (1974)
3. I.J. Fritz, T. Picraux, L.R. Dawson, W.D., Laidig, N.G. Anderson: Appl. Phys. Lett. 46, 967 (1985)10.1063/1.95783 ↗
4. T.G. Andersson, Z.G. Chen, V.D. Kulakovskii, A. Uddin, J.T. Vallin: Appl. Phys. Lett. 51, 752 (1987)10.1063/1.98856 ↗
5. S.L. Weng: J. Appl. Phys. 66, 2217 (1989)10.1063/1.344272 ↗
6. P.J. Orders, B.F. Usher: Appl. Phys. Lett. 50, 980 (1987)10.1063/1.98004 ↗
7. P.L. Gourley, I.J. Fritz, L.R. Dawson: Appl. Phys. Lett. 52, 377 (1988)10.1063/1.99471 ↗
8. I.J. Fritz, P.L. Gourley, L.R. Dawson: Appl. Phys. Lett. 51, 1004 (1987)10.1063/1.98984 ↗
9. I.J. Fritz: Appl. Phys. Lett. 51, 1080 (1987)10.1063/1.98746 ↗
10. K. Köhler, P. Ganser, M. Maier, K.H. Bachem: Proc. 6th Int. Conference on Molecular Beam Epitaxy, San Diego, USA (1990)
11. H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka, T. Matsusue: Appl. Phys. Lett. 51, 1934 (1987)10.1063/1.98305 ↗
12. G. Weimann: Festkörperprobleme (Advances in Physics) Vol. 26, ed. by P. Grosse (Vieweg, Braunschweig 1986) p. 23110.1007/BFb0107799 ↗
13. K. Köhler, P. Ganser, K.H. Bachem, M. Maier, J. Hornung, A. Hülsmann: Gallium Arsenide and Related Compounds 1990, Inst. Phys. Conf. Ser. 112, 521 (1990)