Shot Noise Suppression in Single Electron Transistors

Shot noise in a single electron transistor coupled to a dissipative environment is studied. The evolution of the charging process is modeled using classical circuit equations. The distribution of time between tunnel events in the presence of series coupling resistances is derived and used in modeling the stochastic tunneling processes. It is shown that resistive series elements result in a suppression of the Fano factor, below the theoretical 0.5 limit.