Erratum to: The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation

Samarium-doped zinc oxide (ZnO:Sm)/zinc phthalocyanine (ZnPc) thin film multilayer structure was prepared by combination of pulsed laser deposition (PLD) and organic molecular evaporation (OME). ZnO:Sm thin film was grown by PLD (Nd:YAG, λ = 266 nm, τ = 6 ns) from Sm2O3:ZnO (1 % Sm) target in oxygen ambient at pressure of 10 and 20 Pa at room temperature on fused silica and Si(100) substrates. ZnPc thin film was deposited on ZnO:Sm layer by OME. ZnO:Sm films of c-axis-oriented hexagonal wurtzite structure and α-form ZnPc were obtained. Emission of intra-4f transition in Sm3+ ions and photoluminescence enhancement of near-band-edge emission of ZnO in ZnO:Sm/ZnPc were observed. Electrical properties were not affected by Sm3+ dopant as ZnO:Sm film exhibited high electrical resistivity ~5 × 104 Ω cm.