journal article·2011-11Open access

Exploring Digital Logic Design Using Ballistic Deflection Transistors Through Monte Carlo Simulations

Ignacio Iniguez-de-la-Torre, Sohan Purohit, Vikas Kaushal, Martin Margala, Mufei Gong, Roman Sobolewski, David Wolpert, Paul Ampadu, Tomás González, Javier Mateos

Abstract

We present exploratory studies of digital circuit design using the recently proposed ballistic deflection transistor (BDT) devices. We demonstrate a variety of possible logic functions through simple reconfiguration of two drain-connected BDTs. We further propose the creation of a three-BDT logic cell to yield differential versions of each logic function, improving overall flexibility of BDT circuit design. Each of the proposed gate configurations has been verified through extensive numerical calculations using an in-house Monte Carlo simulator. Simulation results show that the proposed gate arrangements are capable of achieving 400-GHz operating frequencies at room temperature. A compact fit-based analytical model to aid circuit design using BDTs is also introduced.
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Research context

OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor Quantum Structures and Devices · Quantum and electron transport phenomena

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References (37)

Show source-provided references
1. Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures
2. jacoboni · The Monte Carlo Method for Semiconductor Device Simulation Computational Microelectronics · 198910.1007/978-3-7091-6963-6 ↗
3. Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions
4. 10.1088/0268-1242/22/6/01410.1088/0268-1242/22/6/014 ↗
5. 10.1109/CICC.2000.85264810.1109/CICC.2000.852648 ↗
6. 10.1109/TED.2006.88407710.1109/TED.2006.884077 ↗
7. 10.1145/1283780.128378310.1145/1283780.1283783 ↗
8. 10.1109/ISSCC.1984.115662910.1109/ISSCC.1984.1156629 ↗
9. 10.1063/1.160688110.1063/1.1606881 ↗
10. 10.1063/1.296812910.1063/1.2968129 ↗
11. song · Encyclopedia of Nanoscience and Nanotechnology vol 9 · 2004 · 371
12. 10.1109/TED.2003.81585810.1109/TED.2003.815858 ↗
13. Monte Carlo analysis of four-terminal ballistic rectifiers10.1088/0957-4484/15/4/025 ↗
14. 10.1063/1.139832410.1063/1.1398324 ↗
15. 10.1109/TNANO.2006.88503010.1109/TNANO.2006.885030 ↗
16. 10.1109/TNANO.2005.85141310.1109/TNANO.2005.851413 ↗
17. 10.1016/j.tsf.2006.07.17810.1016/j.tsf.2006.07.178 ↗
18. 10.1088/0268-1242/25/12/12501310.1088/0268-1242/25/12/125013 ↗
19. 10.1109/TED.2006.87187810.1109/TED.2006.871878 ↗
20. 10.1088/0268-1242/15/3/30910.1088/0268-1242/15/3/309 ↗
21. 10.1109/LED.2004.84265110.1109/LED.2004.842651 ↗
22. 10.1103/PhysRevLett.80.383110.1103/PhysRevLett.80.3831 ↗
23. 10.1063/1.141904010.1063/1.1419040 ↗
24. Monolithically integrated logic NOR gate based on GaAs/AlGaAs three-terminal junctions10.1109/LED.2007.906108 ↗
25. 10.1063/1.136022910.1063/1.1360229 ↗
26. Nonlinear operation of the Y-branch switch: Ballistic switching mode at room temperature10.1103/PhysRevB.62.16727 ↗
27. 10.1103/PhysRevLett.82.256410.1103/PhysRevLett.82.2564 ↗
28. 10.1063/1.10697510.1063/1.106975 ↗
29. 10.1063/1.139662610.1063/1.1396626 ↗
30. 10.1147/rd.462.021310.1147/rd.462.0213 ↗
31. Microwave detection at 110 GHz by nanowires with broken symmetry10.1021/nl050779g ↗
32. Terahertz electrical response of nanoscale three-branch junctions10.1063/1.3330742 ↗
33. 10.1088/0953-8984/20/38/38420310.1088/0953-8984/20/38/384203 ↗
34. 10.1109/TNANO.2010.205006910.1109/TNANO.2010.2050069 ↗
35. 10.1142/S012915640900606010.1142/S0129156409006060 ↗
36. 10.1016/j.sse.2010.11.01810.1016/j.sse.2010.11.018 ↗
37. 10.1109/TNANO.2009.203496210.1109/TNANO.2009.2034962 ↗