journal article·1992-01

MOS transistors with epitaxial Si, laterally grown over SiO2 by liquid phase epitaxy

R. Bergmann, E. Czech, I. Silier, N. Nagel, E. Bauser, H. J. Queisser, R. P. Zingg, B. H�fflinger

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OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications

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References (19)

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