journal article·1982-07

Majority carrier transistor based on voltage-controlled thermionic emission

R. F. Kazarinov, Serge Luryi

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · GaN-based semiconductor devices and materials · Silicon Nanostructures and Photoluminescence

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (13)

Show source-provided references
1. J.R. Brews: ?Physics of the MOS Transistor?, In Supplement toAdvances in Applied Solid State Science, Vol. 1, ed. by D.Kahng (Academic Press, New York 1981)
2. A.Y. Cho: J. Vac. Sci. Technol.16, 275 (1979)10.1116/1.569926 ↗
3. J.M. Shannon: Appl. Phys. Lett.35, 63 (1979)10.1063/1.90931 ↗
4. C.L. Allyn, A.C. Gossard, W. Wiegmann: Appl. Phys. Lett.36, 373 (1980)10.1063/1.91492 ↗
5. R.J. Malik, K. Board, C.E.C. Wood, L.F. Eastman, T.R. AuCoin, R.L. Ross: Electron. Lett.16, 837 (1980)10.1049/el:19800594 ↗
6. R.F. Kazarinov, S. Luryi: Appl. Phys. Lett.38, 810 (1981)10.1063/1.92140 ↗
7. A. Chandra, L.F. Eastman: Electron. Lett.15, 91 (1979)10.1049/el:19790067 ↗
8. D.J. Coleman, Jr., S.M. Sze: Bell Syst. Tech. J.50, 1695 (1971)10.1002/j.1538-7305.1971.tb02577.x ↗
9. C.O. Bozler, G.D. Alley: IEEE Trans. ED-27, 1128 (1980)10.1109/T-ED.1980.19996 ↗
10. S.M. Sze:Physics of Semiconductor Devices (Wiley-Interscience, New York 1969)
11. J.C. Bean: ?Growth of doped layers by silicon molecular beam epitaxy?, InDoping Processes in Silicon, ed. by F.F.Y. Wang (North-Holland, Amsterdam 1981) Chap. 4; ?Silicon MBE?, J. Vac. Sci. Technol.18, 769 (1981)
12. L.F. Johnson, G.W. Kammlott, K.A. Ingersoll: Appl. Opt.17, 1165 (1978)10.1364/AO.17.001165 ↗
13. L.D. Landau, E.M. Lifshitz:Electrodynamics of Continuous Media (Pergamon Press, London 1960)