Structural and electrical behaviors of silicon nitride thin-films deposited using spin coating technique
Source abstract
Abstract
The present work investigates the charge storage behaviors of the silicon nitride charge trapping (CT) films. Herein, the silicon nitride has been synthesized by a new green deep eutectic solvent (DES) for the first time. The nitride films with a new chemical route are deposited on silicon (Si) substrate using a homemade and cost-effective spin coating method (SCM). X-ray diffraction and scanning electron microscopy have been performed to study the crystallographic and surface morphological properties of the fabricated silicon nitride films. The deposited silicon nitride thin films confirm polycrystalline nature. It is revealed that the silicon nitride films using the DES can be developed efficiently on the Si substrate by the SCM at nearly room temperature. In this work, the charge storage properties of the prepared spin-coated silicon nitride-based metal–insulator-semiconductor (MIS) memory device of Ag/silicon nitride/p-silicon/Ag are also explored by quantifying the current–voltage (I–V) and capacitance–voltage (C–V) characteristics. The flat-band potentials of the MIS capacitor having the nitride film with two-layer cycle deposition are estimated to be 0.043 V and 0.22 V for 1st and 2nd scans, respectively. The large flat-band potentials of 0.79 V for 1st scan and 1.60 V for 2nd scan are estimated, respectively, for the MIS capacitor with six-layer deposition. The positive flat-band potential is owing to the trapped electrons by trap centers located in the fabricated silicon nitride CT films. Therefore, it is suggested that the silicon nitride films fabricated by an inexpensive and efficient SCM at low (nearly room) temperature can be employed as a CT layer in the memory cell.
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Research context
OpenAlex topics: Semiconductor materials and devices · ZnO doping and properties · Ga2O3 and related materials
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References (46)
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