Reestimating the surface stress and solid–liquid interface energy of semiconductors

In this paper, the surface stress f (T) and solid–liquid interface energy γsl (T) of semiconductor crystals are rebuilt by introducing a measurable physical quantity bulk evaporation entropy Sb instead of vibration entropy Svib. The predictions show in agreement with the previous theory works and available experimental results. In addition, the temperature effect is considered. We found that both f (T) and γsl (T) functions decrease following the drop of temperature T, and f (T) exhibits a larger reduction than γsl (T). We also found that f is proportional to the melting enthalpy Hm and inversely proportional to the atomic diameter h and the compressibility κ. The f of surface with lower exponent is smaller than that of the surface with higher exponent.