Structure dependence of GaN-based nanopillar-shaped crystals grown on a quartz glass substrate on their growth conditions
Source abstract
Abstract
Nanopillar-shaped crystals of gallium–nitride-based semiconductors were grown on a quartz glass substrate using molecular beam epitaxy apparatus. Two sets of radio-frequency plasma-assisted active nitrogen sources were simultaneously operated and almost same amounts of indium and gallium were supplied during the growths. The effects of their growth conditions, i.e., the amount of the indium supply, flow rate of nitrogen gas, and growth temperature, on the structures of the nanopillar-shaped crystals were investigated.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Semiconductor Quantum Structures and Devices
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References (25)
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