Device characteristics of amorphous ZnSnLiO thin film transistors with various channel layer thicknesses
Source abstract
Abstract
The preparation and characteristics of ZnSnLiO thin film transistors were studied in this work. The ZnSnLiO films, as the channel layers with thickness varied from 20 to 60 nm, were deposited on SiO2/p-type Si substrates by radio frequency magnetron sputtering. The effect of channel layer thickness on the device characteristics of ZnSnLiO TFTs has been investigated to establish optimal channel layer thickness. The transistor with 40-nm-thick ZnSnLiO film shows the best performance with a field-effect mobility of 47 cm2/V s, a threshold voltage of 4.9 V, and an on/off ratio of 7.2 × 106.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Electrical and Thermal Properties of Materials
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References (35)
Show source-provided references
1. J.S. Park, W.J. Maeng, H.S. Kim et al., Thin Solid Films 520, 1679–1693 (2012)10.1016/j.tsf.2011.07.018 ↗
2. D. Geng, D.H. Kang, M.J. Seok et al., IEEE Electron Device Lett. 33, 1012–1014 (2012)10.1109/LED.2012.2194133 ↗
3. K. Nomura, H. Ohta, A. Takagi et al., Nature 432, 488–492 (2004)10.1038/nature03090 ↗
4. P.T. Liu, Y.T. Chou, L.F. Teng, Appl. Phys. Lett. 95, 233504 (2009)10.1063/1.3272016 ↗
5. J.S. Park, T.S. Kim, K.S. Son et al., IEEE Electron Device Lett. 31, 1248–1250 (2010)
6. B.J. Kim, H.J. Kim, T.S. Yoon et al., Electrochem. Solid State Lett. 13, H419–H422 (2010)10.1149/1.3489530 ↗
7. J.S. Lee, S. Chang, S.M. Koo et al., IEEE Electron Device Lett. 31, 225–227 (2010)10.1109/LED.2009.2038806 ↗
8. H.Y. Jung, S.Y. Park, J.-I. Kim, H. Yang, R. Choi, D.-H. Kim, J.-U. Bae, W.-S. Shin, J.K. Jeong, Thin Solid Films 522, 435–440 (2012)10.1016/j.tsf.2012.08.009 ↗
9. C. Wu, X. Li, J. Lu, Z. Ye, J. Zhang, T. Zhou, R. Sun, L. Chen, B. Lu, X. Pan, Appl. Phys. Lett. 103, 082109 (2013)10.1063/1.4818728 ↗
10. H.Q. Chiang, J.F. Wager, R.L. Hoffman, J. Jeong, D.A. Keszler, Appl. Phys. Lett. 86, 013503 (2005)10.1063/1.1843286 ↗
11. W.B. Jackson, R.L. Hoffman, G.S. Herman, Appl. Phys. Lett. 87, 193503 (2005)10.1063/1.2120895 ↗
12. D.H. Cho, S. Yang, C. Byun et al., Appl. Phys. Lett. 93, 142111 (2008)10.1063/1.2998612 ↗
13. H.B. Kim, H.S. Lee, Thin Solid Films 550, 504–508 (2013)10.1016/j.tsf.2013.10.116 ↗
14. C.-H. Liang, J.L.H. Chau, C.-C. Yang, H.-H. Shih, Mater. Sci. Eng. B 183, 17–23 (2013)10.1016/j.mseb.2013.12.003 ↗
15. C.-H. Chang, P.-T. Liu, Thin Solid Films 549, 36–41 (2013)10.1016/j.tsf.2013.06.042 ↗
16. B.S. Yang, M.S. Huh, S. Oh, U.S. Lee, Y.J. Kim, M.S. Oh, J.K. Jeong, C.S. Hwang, H.J. Kim, Appl. Phys. Lett. 98, 122110 (2011)10.1063/1.3571448 ↗
17. J.Y. Choi, S. Kim, D.H. Kim, S.Y. Lee, Thin Solid Films 594, 293–298 (2015)10.1016/j.tsf.2015.04.048 ↗
18. J.C. Do, C.H. Ahn, H.K. Cho, H.S. Lee, J. Phys. D Appl. Phys. 45, 225103 (2012)10.1088/0022-3727/45/22/225103 ↗
19. H. Aydin, A. Tataroglu, A.A. Al-Ghamdi, F. Yakuphanoglu, F. El-Tantawy, W.A. Farooq, J. Alloys Compd. 625, 18–25 (2014)10.1016/j.jallcom.2014.11.035 ↗
20. L. Yue, H.F. Pu, H.-L. Li, S.-J. Pang, Q. Zhang, Superlattices Microstruct. 57, 123–128 (2013)10.1016/j.spmi.2013.02.006 ↗
21. C.H. Woo, Y.Y. Kim, B.H. Kong, H.K. Cho, Surf. Coat. Technol. 205, S168–S171 (2010)10.1016/j.surfcoat.2010.07.036 ↗
22. S.K. Park, Y.H. Kim, J.I. Han, J. Phys. D Appl. Phys. 42, 125102 (2009)10.1088/0022-3727/42/12/125102 ↗
23. C.C. Liu, Y.S. Chen, J.J. Huang, IEEE Electron. Lett. 42, 824–825 (2006)10.1049/el:20061518 ↗
24. K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, H. Hosono, Jpn. J. Appl. Phys. 45, 4303–4308 (2006)10.1143/JJAP.45.4303 ↗
25. E. Fortunato, P. Barquinha, R. Martins, Adv. Mater. 24, 2945–2986 (2012)10.1002/adma.201103228 ↗
26. J.-S. Park, J.K. Jeong, Y.-G. Mo, H.D. Kim, C.-J. Kim, J. Appl. Phys. 93, 033513 (2008)
27. Z. Yang, J. Yang, T. Meng, M. Qu, Q. Zhang, Mater. Lett. 166, 46–50 (2015)10.1016/j.matlet.2015.12.029 ↗
28. X. Ding, J. Zhang, J. Li, H. Zhang, W. Shi, X. Jiang, Z. Zhang, Superlattices Microstruct. 63, 70–78 (2013)10.1016/j.spmi.2013.08.017 ↗
29. M.G. Yun, S.H. Kim, C.H. Ahn, S.W. Cho, H.K. Cho, J. Phys. D Appl. Phys. 46, 475106 (2013)10.1088/0022-3727/46/47/475106 ↗
30. P. Barquinha, A. Pimentel, A. Marques, L. Pereira, R. Martins, E. Fortuno, J. Non Cryst. Solids 352, 1749–1752 (2006)10.1016/j.jnoncrysol.2006.01.067 ↗
31. A.H. Chen, H.T. CaO, H.Z. Zhang, L.T. Liang, Z.M. Liu, Z. Yu, Q. Wan, Microelectron. Eng. 87, 2019 (2010)10.1016/j.mee.2009.12.081 ↗
32. P. Fortunato, P. Barquinha, A. Pimentel, A. Marques, A. Goncalves, R. Martins, L. Marques, Appl. Lett. 85, 2541 (2004)10.1063/1.1790587 ↗
33. C.-X. Huang, J. Li, X.-W. Ding, J.-H. Zhang, X.-Y. Jiang, Z.-L. Zhang, Superlattices Microstruct. 83, 367–375 (2015)10.1016/j.spmi.2015.02.043 ↗
34. D.J. Kim, D.L. Kim, Y.S. Rim, C.H. Kim, W.H. Jeong, H.S. Lim, H.J. Kim, Appl. Mater. Interfaces 4, 4001–4005 (2012)10.1021/am3008278 ↗
35. J. Wu, D.D. Han, Y.Y. Cong, N.N. Zhao, Z.F. Chen, J.C. Dong, F.L. Zhao, S.D. Zhang, L.F. Liu, X. Zhang, Y. Wang, Electron. Lett. 51, 867–869 (2015)10.1049/el.2015.0362 ↗