Rapid thermal oxygen annealing formation of nickel silicide nanocrystals for nonvolatile memory
Source abstract
Abstract
Discrete NiSi nanocrystals were synthesized by rapid thermal oxygen annealing of very thin Si/Ni/Si films on a SiO2 tunneling layer. They were used to fabricate metal–oxide–semiconductor capacitor memory. Electrical properties of the memory device such as programming, erasing and retention were characterized and good performance was achieved.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
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