Influence of cycling electric polarization on multiferroic behaviors in heterostructural films composed of ferroelectric and ferromagnetic oxides
Source abstract
Abstract
The CoFe2O4/Pb(Zr0.52Ti0.48)O3 bilayer films were prepared by a sol–gel process, and the influence of cycling electric polarization on the multiferroic behaviors of the bilayer films was studied. The ferroelectric polarization hysteresis loops under various choices of magnetic bias were measured by an integrating current method. The results showed that after undergoing cycling electric polarization the ferroelectric polarization of the bilayer films enhanced and the suppression of ferroelectric polarization by external magnetic bias remarkably weakened. Based on the measurements of activation energy and leakage current, we confirmed that the oxygen vacancy migration in the bilayer films occurred during cycling electric polarization. Furthermore, we analyzed the mechanism of the influence of cycling electric polarization on the multiferroic behaviors of the bilayer films and attributed it to the oxygen vacancy migration, which could cause a part of ferroelectric domains to be unpinned from the oxygen vacancies and become more active under electric field and magnetic bias.
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Research context
OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Dielectric properties of ceramics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
Show source-provided references
1. N.A. Spaldin, M. Fiebig, Science 309, 391 (2005)10.1126/science.1113357 ↗
2. R. Ramesh, N.A. Spaldin, Nat. Mater. 6, 21 (2007)10.1038/nmat1805 ↗
3. C.W. Nan, G. Liu, Y. Lin, H. Chen, Phys. Rev. Lett. 94, 197203 (2005)
4. Y.D. Xu, G.A. Wu, H.L. Su, M. Shi, G.Y. Yu, L. Wang, J. Alloys Compd. 509, 3811 (2011)10.1016/j.jallcom.2010.12.112 ↗
5. X.S. Gao, B.J. Rodriguez, L.F. Liu, B. Birajdar, D. Pantel, M. Ziese, M. Alexe, D. Hesse, ACS Nano 4, 1099 (2010)10.1021/nn9012934 ↗
6. S.H. Xie, F.Y. Ma, Y.M. Liu, J.Y. Li, Nanoscale 3, 3152 (2011)10.1039/c1nr10288e ↗
7. S.F. Zhao, J.G. Wan, M.L. Yao, J.M. Liu, F.Q. Song, G.H. Wang, Appl. Phys. Lett. 97, 212902 (2010)
8. Y.J. Wu, J.G. Wan, J.M. Liu, G.H. Wang, Appl. Phys. Lett. 96, 152902 (2010)
9. D. Lebeugle, D. Colson, A. Forget, M. Viret, Appl. Phys. Lett. 91, 022907 (2007)10.1063/1.2753390 ↗
10. T. Kumazawa, Y. Kumagai, H. Miura, M. Kitano, K. Kushida, Appl. Phys. Lett. 72, 608 (1998)10.1063/1.120820 ↗
11. J.X. Zhang, J.Y. Dai, H.L.W. Chan, J. Appl. Phys. 107, 104105 (2010)
12. S.H. Xie, Y.M. Liu, Y. Ou, Q.N. Chen, X.L. Tan, J.Y. Li, J. Appl. Phys. 112, 074110 (2012)
13. P.M. Chaplya, G.P. Carman, J. Appl. Phys. 90, 5278 (2001)10.1063/1.1410330 ↗
14. I. Stolichnov, A. Tagantsev, E. Colla, S. Gentil, S. Hiboux, J. Baborowski, P. Muralt, N. Setter, J. Appl. Phys. 88, 2154 (2000)10.1063/1.1305854 ↗
15. Y. Wang, F. Yuan, T. Wei, C. Zhu, K.F. Wang, Y.D. Xia, J.M. Liu, J. Appl. Phys. 101, 016101 (2007)
16. D.P. Cann, C.A. Randall, T.R. Shrout, Solid State Commun. 100, 529 (1996)10.1016/0038-1098(96)00012-9 ↗
17. J.C. Nino, M.T. Lanagan, C.A. Randall, J. Appl. Phys. 89, 4512 (2001)10.1063/1.1357468 ↗
18. G. Deng, G. Li, A. Ding, Q. Yin, Appl. Phys. Lett. 87, 192905 (2005)
19. W. Li, K. Chen, Y.Y. Yao, J.S. Zhu, Y.N. Wang, Appl. Phys. Lett. 85, 4717 (2004)10.1063/1.1823583 ↗