Nanoscale electronic inhomogeneity in ZrNx thin films growth by reactive sputtering at room temperature
Source abstract
Abstract
We report on the structural and electrical properties of nanocrystalline zirconium nitride films grown by reactive sputtering on Si (100) substrates at room temperature. The samples were grown with a N2/Ar mixture varying the N2 concentration between 8 and 60% of the total atmosphere. The films are nanocrystalline with the coexistence of conducting and insulator phases. The electrical resistivity evolves from ZrN with a metallic state to an insulating rich nitrogen phase, passing through a semiconductor-like behavior as N2 in the mixture increases. A variable-range-hopping regime describes the temperature dependence of the resistivity for mixtures between 30 and 40%. Reactive mixtures of 50 and 60% of N2 give more insulator films. Beyond these macroscopic properties, the films display inhomogeneity electrical properties at the nanoscale with coexistence regions of different conductivity. The inhomogeneities reduce as nitrogen stoichiometry increases and the films become more insulators. Our results are relevant for applications including conducting electrodes and insulator barriers in tunneling devices.
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Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Semiconductor materials and devices · Metal and Thin Film Mechanics
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References (38)
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1. A. Banerjee, L.J. Baker, A. Doye, M. Nord, R.M. Heath, K. Erotokritou, D. Bosworth, Z.H. Barber, I. MacLaren, R.H. Hadfield, Characterisation of amorphous molybdenum silicide (MoSi) superconducting thin films and nanowires. Supercond. Sci. Technol. 30, 084010 (2017). https://doi.org/10.1088/1361-6668/aa76d810.1088/1361-6668/aa76d8 ↗
2. C.M. Zgrabik, LHu. Evelyn, Optimization of sputtered titanium nitride as a tunable metal for plasmonic applications. Opt. Mater. Exp. 5, 2786–2797 (2015). https://doi.org/10.1364/OME.5.00278610.1364/OME.5.002786 ↗
3. J.-S. Lee, J. Cho, C.-Y. You, Growth and characterization of α and β-phase tungsten films on various substrates. J. Vac. Sci. Technol. 34, 021502 (2016). https://doi.org/10.1116/1.493626110.1116/1.4936261 ↗
4. M.J. Twu, A.H. Chiou, C.C. Hu, C.Y. Hsu, C.G. Kuo, Properties of TiO2 films deposited on flexible substrates using direct current magnetron sputtering and using high power impulse magnetron sputtering. Polym. Degrad. Stab. 117, 1–7 (2015). https://doi.org/10.1016/j.polymdegradstab.2015.03.01010.1016/j.polymdegradstab.2015.03.010 ↗
5. Z. Rui, H. Zhenxuan, J. Xiangquan, Du. Jie Yang, Z.H. Bo, Yu. Shi, Deposition of molybdenum thin films on flexible polymer substrates by radio frequency magnetron sputtering. J. Nanosci. Nanotechnol. 16, 8154–8159 (2016). https://doi.org/10.1166/jnn.2016.1278210.1166/jnn.2016.12782 ↗
6. V. Gupta, B. Yelamanchili, S. Zou, T. Isaacs-Smith, J. Sellers, D. Tuckerman, M. Hamilton, Thin-Film Nb/polyimide superconducting stripline flexible cables. IEEE Trans. Appl. Supercond. 29, 1501605 (2019). https://doi.org/10.1109/TASC.2019.290420310.1109/TASC.2019.2904203 ↗
7. S.V. Zaitsev, N.I. Cherkashina, V.I. Pavlenko, D.S. Prochorenkov, Formation and stability of W coating on a flexible polyimide substrate. Thin Solid Films 715, 138424 (2020). https://doi.org/10.1016/j.tsf.2020.13842410.1016/j.tsf.2020.138424 ↗
8. D. Roman, J. Bernardi, C.L.G. de Amorim, F.S. de Souza, A. Spinelli, C. Giacomelli, C.A. Figueroa, I.J.R. Baumvol, R.L.O. Basso, Effect of deposition temperature on microstructure and corrosion resistance of ZrN thin films deposited by DC reactive magnetron sputtering. Mater. Chem. Phys. 130, 147–153 (2011). https://doi.org/10.1016/j.matchemphys.2011.06.01310.1016/j.matchemphys.2011.06.013 ↗
9. S. Ghosh, S.M. Jeong, S.R. Polaki, A review on metal nitrides/oxynitrides as an emerging supercapacitor electrode beyond oxide. Korean J. Chem. Eng. 35, 1389–1408 (2018). https://doi.org/10.1007/s11814-018-0089-610.1007/s11814-018-0089-6 ↗
10. S.A. Rasaki, B. Zhang, K. Anbalgam, T. Thomas, M. Yang, Synthesis and application of nano-structured metal nitrides and carbides: a review. Prog. Sol. State Chem. 50, 1–15 (2018). https://doi.org/10.1016/j.progsolidstchem.2018.05.00110.1016/j.progsolidstchem.2018.05.001 ↗
11. Z.B. Qia, Z.T. Wu, H.F. Liang, D.F. Zhang, J.H. Wang, Z.C. Wanga, In situ and ex situ studies of microstructure evolution during high-temperature oxidation of ZrN hard coating. Scripta Mater. 97, 9–12 (2015). https://doi.org/10.1016/j.scriptamat.2014.10.02410.1016/j.scriptamat.2014.10.024 ↗
12. Y. Wang, F. Cao, M. Ding, D. Yang, Investigation of Zr–N thin films for use as diffusion barrier in Cu metallization. Microelectron. J. 38, 910–914 (2007). https://doi.org/10.1016/j.mejo.2007.06.00110.1016/j.mejo.2007.06.001 ↗
13. J. Westlinder, J. Malmström, G. Sjöblom, J. Olsson, Low-resistivity ZrNx metal gate in MOS devices. Sol. State Electron. 49, 1410–1413 (2005). https://doi.org/10.1016/j.sse.2005.06.02110.1016/j.sse.2005.06.021 ↗
14. K. Schwarz, A.R. Williams, J.J. Cuomo, J.H.E. Harper, H.T.G. Hentzell, Zirconium nitride a new material for Josephson junctions. Phys. Rev B 32, 8312 (1985). https://doi.org/10.1103/PhysRevB.32.831210.1103/PhysRevB.32.8312 ↗
15. T. Yotsuya, M. Yoshitake, New type cryogenic thermometer using sputtered Zr-N films. Appl. Phys. Lett. 51, 235 (1987). https://doi.org/10.1063/1.9845910.1063/1.98459 ↗
16. S. Zhang, J. Wang, Wu. Rong, L. Liu, B.P.C. Liu, Structural and corrosion resistance properties of sputtered zirconium nitride thin films as electrode material for supercapacitor. J. Alloys Comp. 900, 163506 (2022). https://doi.org/10.1016/j.jallcom.2021.16350610.1016/j.jallcom.2021.163506 ↗
17. Y. Yuan, J. Wang, S. Adimi, H. Shen, T. Thomas, R. Ma, J.P. Attfield, M. Yang, Zirconium nitride catalysts surpass platinum for oxygen reduction. Nat. Mater. 19, 282–286 (2020). https://doi.org/10.1038/s41563-019-0535-910.1038/s41563-019-0535-9 ↗
18. A. Ul-Hamid, The effect of deposition conditions on the properties of Zr-carbide, Zr-nitride and Zr-carbonitride coatings – a review. Mater. Adv. 1, 988–1011 (2020). https://doi.org/10.1039/D0MA00232A10.1039/D0MA00232A ↗
19. J.P. Dauchot, S. Edart, M. Wautelet, M. Hecq, Synthesis of zirconium nitride films monitored by in situ soft X-ray spectrometry. Vaccum 46, 927–930 (1995). https://doi.org/10.1016/0042-207X(95)00074-710.1016/0042-207X(95)00074-7 ↗
20. A. Zerr, G. Miehe, R. Riedel, Synthesis of cubic zirconium and hafnium nitride having Th3P4 structure. Nat. Mater. 2, 185–189 (2003). https://doi.org/10.1038/nmat83610.1038/nmat836 ↗
21. M. Lerch, E. Fuglein, J. Wrba, Synthesis, crystal structure, and high temperature behavior of Zr3N4 Z. Anorg. Allg. Chem. 622, 367–372 (1996). https://doi.org/10.1002/zaac.1996622022710.1002/zaac.19966220227 ↗
22. H.M. Benia, M. Guemmaz, G. Schmerber, A. Mosser, J.-C. Parlebas, Investigations on non-stoichiometric zirconium nitrides. Appl. Surf. Scie 200, 231–238 (2002). https://doi.org/10.1016/10.1016/S0169-4332(02)00925-X10.1016/10.1016/S0169-4332(02)00925-X ↗
23. R. Lamni, E. Martinez, S.G. Springer, R. Sanjines, P.E. Schmid, F. Levy, Optical and electronic properties of magnetron sputtered ZrNx thin films. Thin Solid Films 447–448, 316–321 (2004). https://doi.org/10.1016/S0040-6090(03)01109-X10.1016/S0040-6090(03)01109-X ↗
24. D.S. Yee, J.J. Cuomo, M.A. Frisch, D.P.E. Smith, Reactive radio frequency sputter deposition of higher nitrides of titanium, zirconium, and hafnium. J. Vacuum Scie Tech A 4, 381 (1986). https://doi.org/10.1116/1.57393310.1116/1.573933 ↗
25. M. Östling, S. Nygren, C.S. Petersson, H. Norström, R. Buchta, H.-O. Blom, S. Berg, A comparative study of the diffusion barrier properties of TiN and ZrN. Thin Solid Films 145, 81–88 (1986). https://doi.org/10.1016/0040-6090(86)90254-310.1016/0040-6090(86)90254-3 ↗
26. C.-P. Liu, H.-G. Yang, Systematic study of the evolution of texture and electrical properties of ZrNx thin films by reactive DC magnetron sputtering. Thin Solid Films 444, 111–119 (2003). https://doi.org/10.1016/S0040-6090(03)01191-X10.1016/S0040-6090(03)01191-X ↗
27. N. Farkas et al., Characterization of zirconium nitride films sputter deposited with an extensive range of nitrogen flow rates. J. Vacuum Sci. Technol. A 26, 297 (2008). https://doi.org/10.1116/1.283985610.1116/1.2839856 ↗
28. N. Haberkorn, S. Bengio, S. Suárez, P.D. Pérez, M. Sirena, J. Guimpel, Effect of the nitrogen-argon gas mixtures on the superconductivity properties of reactively sputtered molybdenum nitride thin films. Mater. Lett 215, 15–18 (2018). https://doi.org/10.1016/j.matlet.2017.12.04510.1016/j.matlet.2017.12.045 ↗
29. A. Cassinese, M. Iavarone, R. Vaglio, M. Grimsditch, S. Uran, Transport properties of ZrN superconducting films. Phys. Rev B 62, 13915 (2000). https://doi.org/10.1103/PhysRevB.62.1391510.1103/PhysRevB.62.13915 ↗
30. A.B. Mei, Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering. J. Vacuum Sci. Technol. A 31, 061516 (2013). https://doi.org/10.1116/1.482534910.1116/1.4825349 ↗
31. J. Brillson, Y. Lu, ZnO Schottky barriers and Ohmic contacts. J. Appl. Phys. 109, 121301 (2011). https://doi.org/10.1063/1.358117310.1063/1.3581173 ↗
32. H. Kohlstedt, N.A. Pertsev, J.R. Contreras, R. Waser, Theoretical current–voltage characteristics of ferroelectric tunnel junctions. Phys. Rev. B 72, 125341 (2005). https://doi.org/10.1103/PhysRevB.72.12534110.1103/PhysRevB.72.125341 ↗
33. I.S. Beloborodov, A.V. Lopatin, V.M. Vinokur, K.B. Efetov, Granular electronic systems. Rev. Mod. Phys. 79, 469–518 (2007). https://doi.org/10.1103/RevModPhys.79.46910.1103/RevModPhys.79.469 ↗
34. Y.-L. Huang, S.-P. Chiu, Z.-X. Zhu, Z.-Q. Li, J.-J. Lin, Variable-range-hopping conduction processes in oxygen deficient polycrystalline ZnO films. J. Appl. Phys. 107, 063715 (2010). https://doi.org/10.1063/1.3357376710.1063/1.33573767 ↗
35. L. Zhang, Z.-J. Tang, Polaron relaxation and variable-range-hopping conductivity in the giant-dielectric-constant material CaCu3Ti4O12. Phys. Rev B 70, 174306 (2004). https://doi.org/10.1103/PhysRevB.70.17430610.1103/PhysRevB.70.174306 ↗
36. C. Ang, Z. Jing, Yu. Zhi, Variable-range-hopping conduction and metal–insulator transition in Cu-doped BaTiO3. J. Phys. Condens. Mater 11, 9703–9708 (1999). https://doi.org/10.1088/0953-8984/11/48/32710.1088/0953-8984/11/48/327 ↗
37. S. Ravi, M. Kar, Study of magneto-resistivity in La1-xAgxMnO3 compounds. Physica B: Cond. Matter 348, 169–176 (2004). https://doi.org/10.1016/j.physb.2003.11.08710.1016/j.physb.2003.11.087 ↗
38. R. Mareus, C. Mastail, F. Anğay, N. Brunetière, G. Abadias, Study of columnar growth, texture development and wettability of reactively sputter-deposited TiN, ZrN and HfN thin films at glancing angle incidence. Surf. Coat. Technol. 399, 126130 (2020). https://doi.org/10.1016/j.surfcoat.2020.12613010.1016/j.surfcoat.2020.126130 ↗