Influence of h-BN on electronic properties of GeS/InSe heterojunction
Source abstract
Abstract
Constructing van der Waals heterojunctions can enhance two-dimensional (2D) materials with desired properties and greatly extend the applications of the original materials. Here, we implement hexagonal boron nitride (h-BN) layers in between a GeS/InSe heterojunction. We construct three types of heterojunctions GeS/InSe, GeS/h-BN/InSe and GeS/TB (two layers of h-BN)/InSe. It can be seen that the insertion of h-BN causes the increase of the bandgap of the heterojunctions. The bandgaps of GeS/InSe, GeS/h-BN/InSe and GeS/TB/InSe are 0.35, 0.37 and 0.51 eV, respectively. Furthermore, the external electric field can modulate the electronic structure of heterojunctions, consequently the bandgaps. The h-BN layers suppress the interlayer coupling and effectively separates the charges. Inserting h-BN reduces the absorption coefficient of the heterojunctions, but the external electric field can effectively improve the absorption coefficients of GeS/h-BN/InSe and GeS/TB/InSe heterojunctions. Therefore, our proposed method of using the two-dimensional insulator h-BN to modulate the physical properties of the heterojunction provides a useful way for the development of high-performance optoelectronic devices in the future.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · 2D Materials and Applications · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (34)
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