Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure
Source abstract
Abstract
We experimentally investigate the effect of post-deposition annealing on the charge distribution of a metal-oxide-semiconductor capacitor with a TiN/HfO2/SiO2/Si gate structure. We decoupled interfacial charges at the SiO2/Si and HfO2/SiO2 interfaces; bulk charges in HfO2; and the dipole formation at the HfO2/SiO2 interface. The interfacial charges at the HfO2/SiO2 interface decreased and the dipole increased after H2 or N2 annealing. Oxygen dangling bonds are the physical origin of the charges at the HfO2/SiO2 interface. The interfacial charges at the SiO2/Si interface and the bulk charges in HfO2 are almost unchanged.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
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1. J.H. Choi, Y. Mao, J.P. Chang, Mater. Sci. Eng R Rep. 72(6), 97–136 (2011)10.1016/j.mser.2010.12.001 ↗
2. G. He, X. Chen, Z. Sun, Surf. Sci. Rep. 68(1), 68–107 (2013)10.1016/j.surfrep.2013.01.002 ↗
3. Y. Irokawa, T. Nabatame, A. Ohi, N. Ikeda, O. Sakata, Y. Koide, Jpn. J. Appl. Phys. 58(10), 100915 (2019)10.7567/1347-4065/ab476a ↗
4. T. Nabatame, E. Maeda, M. Inoue, K. Yuge, M. Hirose, K. Shiozaki, N. Ikeda, T. Ohishi, A. Ohi, Appl. Phys. Express 12(1), 011009 (2019)10.7567/1882-0786/aaf62a ↗
5. K. Mistry, C. Allen, C. Auth, B. Beattie, D. Bergstrom, M. Bost, M. Brazier, M. Buehler, A. Cappellani, R. Chau, C. Choi, G. Ding, K. Fischer, T. Ghani, R. Grover, W. Han, D. Hanken, M. Hattendorf, J. He, J. Hicks, R. Huessner, D. Ingerly, P. Jain, R. James, L. Jong, S. Joshi, C. Kenyon, K. Kuhn, K. Lee, H. Liu, J. Maiz, B. McIntyre, P. Moon, J. Neirynck, S. Pae, C. Parker, D. Parsons, C. Prasad, L. Pipes, M. Prince, P. Ranade, T. Reynolds, J. Sandford, L. Shifren, J. Sebastian, J. Seiple, D. Simon, S. Sivakumar, P. Smith, C. Thomas, T. Troeger, P. Vandervoorn, S. Williams and K. Zawadzki, IEEE International Electron Devices Meeting, 2007, p. 247
6. G.B. Alers, D.J. Werder, Y. Chabal, H.C. Lu, E.P. Gusev, E. Garfunkel, T. Gustafsson, R.S. Urdahl, Appl. Phys. Lett. 73(11), 1517–1519 (1998)10.1063/1.122191 ↗
7. G.D. Wilk, R.M. Wallace, J.M. Anthony, J. Appl. Phys. 89(10), 5243 (2001)10.1063/1.1361065 ↗
8. J. Robertson, Rep. Prog. Phys. 69(2), 327–396 (2006)10.1088/0034-4885/69/2/R02 ↗
9. Y. Morita, S. Migita, W. Mizubayashi, H. Ota, Jpn. J. Appl. Phys. 51(2), 02BA04 (2012)10.7567/JJAP.51.02BA04 ↗
10. S. Migita, Y. Morita, W. Mizubayashi and H. Ota, IEEE International Electron Devices Meeting, 2010, p. 11.5.1
11. X. Wang, K. Han, W. Wang, X. Ma, D. Chen, J. Zhang, J. Du, Y. Xiong, A. Huang, Appl. Phys. Lett. 97(6), 062901 (2010)10.1063/1.3475774 ↗
12. X. Wang, K. Han, W. Wang, X. Ma, J. Xiang, D. Chen, J. Zhang, Jpn. J. Appl. Phys. 50(10), 10PF02 (2011)10.7567/JJAP.50.10PF02 ↗
13. X. Wang, J. Xiang, S. Wang, W. Wang, C. Zhao, T. Ye, Y. Xiong, J. Zhang, J. Phys. D Appl. Phys. 49(25), 255104 (2016)10.1088/0022-3727/49/25/255104 ↗
14. Y. T. Hou, F. Y. Yen, P. F. Hsu, V. S. Chang, P. S. Lim, C. L. Hung, L. G. Yao, J. C. Jiang, H. J. Lin, Y. Jin, S. M. Jang, H. J. Tao, S. C. Chen and M. S. Liang, IEEE International Electron Devices Meeting, 2005, p. 31
15. R. Jha, J. Gurganos, Y.H. Kim, R. Choi, J. Lee, V. Misra, Electron device letters. IEEE 25(6), 420–423 (2004)
16. S. Kubicek, T. Schram, V. Paraschiv, R. Vos, M. Demand, C. Adelmann, T. Witters, L. Nyns, L. A. Ragnarsson, H. Yu, A. Veloso, R. Singanamalla, T. Kauerauf, E. Rohr, S. Brus, C. Vrancken, V. S. Chang, R. Mitsuhashi, A. Akheyar, H. J. Cho, J. C. Hooker, B. J. O'Sullivan, T. Chiarella, C. Kerner, A. Delabie, S. Van Elshocht, K. De Meyer, S. De Gendt, P. Absil, T. Hoffmann and S. Biesemans, IEEE International Electron Devices Meeting, 2007, p. 49
17. C.-Y. Lin, T.-C. Chang, K.-J. Liu, J.-Y. Tsai, C.-E. Chen, H.-W. Liu, Y.-H. Lu, T.-Y. Tseng, O. Cheng, C.-T. Huang, Thin Solid Films 620, 30–33 (2016)10.1016/j.tsf.2016.08.072 ↗
18. L. Zhou, X. Wang, X. Ma, J. Xiang, H. Yang, C. Zhao, T. Ye, W. Wang, J. Phys. D Appl. Phys. 50(24), 245102 (2017)10.1088/1361-6463/aa6f96 ↗
19. S. Nittayakasetwat, K. Kita, J. Appl. Phys. 125(8), 084105 (2019)10.1063/1.5079926 ↗
20. B. Shin, J.R. Weber, R.D. Long, P.K. Hurley, C.G. Van de Walle, P.C. McIntyre, Appl. Phys. Lett. 96(15), 152908 (2010)10.1063/1.3399776 ↗
21. R.W. Johnson, A. Hultqvist, S.F. Bent, Mater. Today 17(5), 236–246 (2014)10.1016/j.mattod.2014.04.026 ↗
22. K. Shiraishi, K. Yamada, K. Torii, Y. Akasaka, K. Nakajima, M. Konno, T. Chikyow, H. Kitajima, T. Arikado, Jpn. J. Appl. Phys. 43((No. 11A)), L1413–L1415 (2004)10.1143/JJAP.43.L1413 ↗
23. D. Lim, R. Haight, M. Copel, E. Cartier, Appl. Phys. Lett. 87(7), 072902 (2005)10.1063/1.2011791 ↗
24. S. Guha, V. Narayanan, Phys. Rev. Lett. 98(19), 196101 (2007)10.1103/PhysRevLett.98.196101 ↗
25. K. Xiong, J. Robertson, M.C. Gibson, S.J. Clark, Appl. Phys. Lett. 87(18), 183505 (2005)10.1063/1.2119425 ↗
26. F.W. Kutzler, G.S. Painter, Phys. Rev. B 37(6), 2850–2854 (1988)10.1103/PhysRevB.37.2850 ↗
27. J.L. Gavartin, A.L. Shluger, A.S. Foster, G.I. Bersuker, J. Appl. Phys. 97(5), 053704 (2005)10.1063/1.1854210 ↗
28. R.S. Johnson, G. Lucovsky, I. Baumvol, J. Vac. Sci. Technol. A 19(4), 1353–1360 (2001)10.1116/1.1379316 ↗
29. J. Widiez, K. Kita, K. Tomida, T. Nishimura, A. Toriumi, Jpn. J. Appl. Phys. 47(4), 2410–2414 (2008)10.1143/JJAP.47.2410 ↗
30. P.D. Kirsch, P. Sivasubramani, J. Huang, C.D. Young, M.A. Quevedo-Lopez, H.C. Wen, H. Alshareef, K. Choi, C.S. Park, K. Freeman, M.M. Hussain, G. Bersuker, H.R. Harris, P. Majhi, R. Choi, P. Lysaght, B.H. Lee, H.H. Tseng, R. Jammy, T.S. Boscke, D.J. Lichtenwalner, J.S. Jur, A.I. Kingon, Appl. Phys. Lett. 92(9), 092901–092903 (2008)10.1063/1.2890056 ↗
31. P. Sivasubramani, T. S. Boscke, J. Huang, C. D. Young, P. D. Kirsch, S. A. Krishnan, M. A. Quevedo-Lopez, S. Govindarajan, B. S. Ju, H. R. Harris, D. J. Lichtenwalner, J. S. Jur, A. I. Kingon, J. Kim, B. E. Gnade, R. M. Wallace, G. Bersuker, B. H. Lee and R. Jammy, IEEE Symposium on the VLSI Technology, 2007, p. 68
32. K. Kita and A. Toriumi, IEEE International Electron Devices Meeting, 2008, p. 1
33. K. Kita, A. Toriumi, Appl. Phys. Lett. 94(13), 132902–132903 (2009)10.1063/1.3110968 ↗