Improved internal quantum efficiency of photoluminescence in zinc ion-implanted ZnO bulk crystals
Source abstract
Abstract
Achieving a high internal quantum efficiency (IQE) of luminescence is critical to the optoelectronic applications but still a challenge for ZnO materials. In this work, we demonstrate that the IQE of bulk ZnO crystals can be greatly increased by Zn+ ion implantation and subsequent annealing. The implantation dose, energy, and annealing temperature are found to affect the IQE significantly. A highest IQE of 30.8% can be achieved when the ZnO crystal is implanted with dose of 1 × 1015cm−2 and rapidly annealed at 700 °C. The improving of IQE is interpreted as a combination result of suppressed formation of vacancy defects and enhanced exciton–phonon coupling.
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Research context
OpenAlex topics: ZnO doping and properties · Perovskite Materials and Applications · Ga2O3 and related materials
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References (32)
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