Exploring the Design of the Magnetic–Electrical Interface for Nanomagnet Logic

Nanomagnet logic (NML) has received increasing attention as an alternative information processing technology given the potential for low energy dissipation, a relatively advanced experimental state of the art, and intangibles such as inherent radiation hardness and nonvolatility. In order to facilitate the integration of NML-based circuits with transistor-based circuits, a magnetic-electrical interface (MEI) is needed. This paper focuses on the output portion of MEI design, i.e., converting signals from the magnetic domain to the electrical domain. The basic idea of an MEI output is to employ fringing fields from an NML device to set the magnetization state of the free layer of a magnetic tunnel junction. A detailed study of four different MEI output designs is presented which considers metrics such as the clock energy required to set the output state, the magnetoresistance ratio, etc. Simulation-based analysis reveals the pros and cons of each design. A design where multiple NML devices (i.e., free layers) share a large synthetic antiferromagnet is most promising based on our simulation-based, quantitative analysis.