journal article·2015-07

High-Temperature Die Attachment Using Sn-Plated Zn Solder for Power Electronics

Sungwon Park, Shijo Nagao, Yoshitaka Kato, Hiroshi Ishino, Kazuhiko Sugiura, Kazuhiro Tsuruta, Katsuaki Suganuma

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Abstract

Pure Zn is a Pb-free die-attach material considered suitable for application in high-temperature electronics such as widebandgap semiconductor devices, as it has both the requisite electrical/thermal conductivity and an excellent thermal shock resistance. The high melting point of Zn (419.5 °C), however, means that die-attachment using pure Zn would require higher bonding temperatures (>430 °C), whereas a lower temperature is more desirable for mass production. This paper, therefore, presents a bonding method based on using Sn-plated Zn solder (Sn/Zn/Sn structure) to achieve a lower bonding temperature than pure Zn die attachment. The resulting shear strength of this bonding exceeds 25 MPa at 350 °C for 30 min, which is attributed to a uniform and complete Ni-Zn IMC (γ-Ni 5 Zn 21 ) reaction layer. Furthermore, this bonding strength is retained beyond 25 MPa without serious degradation, even after thermal shock testing within a temperature range of -50 °C-300 °C; and thus, the Sn-plated Zn solder proposed has great potential as a die-attach material for high-temperature applications such as power devices.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Electronic Packaging and Soldering Technologies · 3D IC and TSV technologies · Intermetallics and Advanced Alloy Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (26)

Show source-provided references
1. 10.1109/TADVP.2007.89862810.1109/TADVP.2007.898628 ↗
2. 10.1016/j.microrel.2011.07.08810.1016/j.microrel.2011.07.088 ↗
3. 10.1109/TCPMT.2012.221448110.1109/TCPMT.2012.2214481 ↗
4. 10.1016/j.jallcom.2011.10.09210.1016/j.jallcom.2011.10.092 ↗
5. 10.1016/j.jallcom.2012.07.04010.1016/j.jallcom.2012.07.040 ↗
6. 10.1007/s10854-013-1463-010.1007/s10854-013-1463-0 ↗
7. 10.1016/j.actamat.2010.02.01810.1016/j.actamat.2010.02.018 ↗
8. 10.1109/TCAPT.2010.204690110.1109/TCAPT.2010.2046901 ↗
9. 10.1109/TPEL.2012.221221110.1109/TPEL.2012.2212211 ↗
10. 10.1016/j.jallcom.2013.10.20410.1016/j.jallcom.2013.10.204 ↗
11. 10.1007/s11663-010-9365-510.1007/s11663-010-9365-5 ↗
12. 10.1016/S0038-1101(97)00104-410.1016/S0038-1101(97)00104-4 ↗
13. 10.1109/LED.2010.208133810.1109/LED.2010.2081338 ↗
14. 10.1109/TEPM.2007.89915810.1109/TEPM.2007.899158 ↗
15. 10.1016/j.mee.2010.12.07210.1016/j.mee.2010.12.072 ↗
16. 10.1007/s11837-009-0013-y10.1007/s11837-009-0013-y ↗
17. 10.1109/TPEL.2013.226890010.1109/TPEL.2013.2268900 ↗
18. 10.1109/TCPMT.2010.210043210.1109/TCPMT.2010.2100432 ↗
19. 10.1109/TEPM.2002.80771910.1109/TEPM.2002.807719 ↗
20. Thermochemical data
21. 10.1007/s11664-008-0550-010.1007/s11664-008-0550-0 ↗
22. 10.1007/s10854-011-0511-x10.1007/s10854-011-0511-x ↗
23. 10.2320/matertrans.46.241310.2320/matertrans.46.2413 ↗
24. 10.1361/105497102360412510.1361/1054971023604125 ↗
25. 10.1016/j.matchemphys.2012.03.05710.1016/j.matchemphys.2012.03.057 ↗
26. 10.2320/matertrans.48.58410.2320/matertrans.48.584 ↗