GaN-nanowire-based dye-sensitized solar cells
Source abstract
Abstract
GaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiOx core–shell structures, and we show that coating of GaN nanowires with a TiOx shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm2 and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · TiO2 Photocatalysis and Solar Cells · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (17)
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