A CuxS/GO composite hole transport layer for photovoltaic performance enhancement on CuInS2 quantum dot-sensitized solar cells
Source abstract
Abstract
In this work, a CuxS/GO composite hole transport layer is prepared on the surface of TiO2/CuInS2 photo-electrodes to modulate the charge transfer efficiency of quantum dot-sensitized solar cells. The normalized PL intensity of TiO2/CuInS2 photo-electrodes had been obviously quenched with the as-prepared CuxS/GO composite hole transport layer, which had exhibited excellent charge separation properties of the solar cells. Due to the reduce of charge recombination traps under CuxS/GO composite hole transport layer, the charge transfer efficiency of the solar cells had been effectively improved. As a result, the higher Voc, FF and Jsc value can be obtained for TiO2/CuInS2 quantum dot sensitized solar cells with this CuxS/GO composite hole transport layer, which had exhibited the photovoltaic conversion efficiency enhancement from 4.85% to 6.07%.
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (23)
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