Effect of Al2O3-doping on the structure and optoelectronic characteristics of MgZnO thin film prepared by RF magnetron sputtering
Source abstract
Abstract
A systematic study of the effect of Al2O3 doping concentration in targets on the structure and optoelectronic characteristics of sputtered MgZnO films was conducted. The films were prepared on glass substrates by radio frequency magnetron sputtering from a MgZnO target mixed with 0–4 wt.% Al2O3. X-ray diffraction analysis demonstrated that the Al-doped MgZnO films had a highly (002) preferred orientation with only one intense diffraction peak. The electrical properties of the Al-doped MgZnO films were dependent on the Al2O3 concentration. Optimal results of Al-doped MgZnO films were obtained at an Al2O3-doping concentration of 2 wt.%, with low resistivity of 2.82 × 10−3 Ω-cm and high transmittance of 91% in the visible region. Outstanding electrical properties were achieved because of the significantly increased carrier concentration. The optical bandgap of the Al-doped MgZnO films showed a short-wavelength shift with increased Al2O3-doping concentration. The low electrical resistivity and high transparency of Al-doped MgZnO films indicated their potential as transparent conductive oxide window materials for UV optoelectronic devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Magnesium Oxide Properties and Applications · Ga2O3 and related materials
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References (77)
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1. R.A. Afre, N. Sharma, M. Sharon, M. Sharon, Transparent Conducting Oxide Films for Various Applications: A Review. Reviews on Advanced Materials 53, 79–89 (2018)10.1515/rams-2018-0006 ↗
2. A.F. Abdulrahman, The effect of different substrate-inclined angles on the characteristic properties of ZnO nanorods for UV photodetectors applications. J Mater Sci: Mater Electron 31, 14357–14374 (2020)
3. J.-S. Shiau, S. Brahma, C.-P. Liu, J.-L. Huang, Ultraviolet photodetectors based on MgZnO thin film grown by RF magnetron sputtering. Thin Solid Films 620, 170–174 (2016)10.1016/j.tsf.2016.09.037 ↗
4. C.-Z. Wu, L.-W. Ji, C.-H. Liu, S.-M. Peng, S.-J. Young, K.-T. Lam, C.-J. Huang, Ultraviolet photodetectors based on MgZnO thin films. J. Vac. Sci. Technol., A 29, 03A118 (2011)10.1116/1.3575552 ↗
5. H. Zhu, C.X. Shan, B.H. Li, J.Y. Zhang, B. Yao, Z.Z. Zhang, D.X. Zhao, D.Z. Shen, X.W. Fan, Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes. J. Phys. Chem. C 113, 2980–2982 (2009)10.1021/jp8098768 ↗
6. F. Rahman, Zinc oxide light-emitting diodes: a review, Optical Engineering 58 (2019) 010901.10.1117/1.OE.58.1.010901 ↗
7. S. Sasa, T. Hayafuji, M. Kawasaki, K. Koike, M. Yano, M. Inoue, Improved Stability of High-Performance ZnO/ZnMgO Hetero-MISFETs. IEEE Electron Device Lett. 28, 543–545 (2007)10.1109/LED.2007.899448 ↗
8. Z. Shi, L. Zhao, X. Xia, W. Zhao, H. Wang, J. Wang, X. Dong, B. Zhang, G. Du, Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes. J. Lumin. 131, 1645–1648 (2011)10.1016/j.jlumin.2011.04.016 ↗
9. Z.-F. Shi, Y.-T. Zhang, X.-C. Xia, W. Zhao, H. Wang, L. Zhao, X. Dong, B.-L. Zhang, G.-T. Du, Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction. Nanoscale 5, 5080–5085 (2013)10.1039/c3nr33445g ↗
10. Th. Gruber, C. Kirchner, R. Kling, F. Reuss, A. Waag, ZnMgO epilayers and ZnO–ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region. Appl. Phys. Lett. 84, 5359–5361 (2004)10.1063/1.1767273 ↗
11. M. Zakria, T.T. Huynh, F.C.C. Ling, S.C. Su, M.R. Phillips, C. Ton-That, Highly Luminescent MgZnO/ZnO Multiple Quantum Wells for Photonics Devices. ACS Appl. Nano Mater. 2, 2574–2579 (2019)10.1021/acsanm.9b00592 ↗
12. S. Thonglem, C. Suksri, K. Pengpat, G. Rujijanagul, S. Eitssayeam, U. Intatha, T. Tunkasiri, Tuning the Band Gap of ZnO Thin Films by Mg Doping. Key Eng. Mater. 690, 131–136 (2016)10.4028/www.scientific.net/KEM.690.131 ↗
13. C. Franz, M. Giar, M. Heinemann, M. Czerner, C. Heiliger, Band Structure and Effective Masses of Zn1-xMgxO. MRS Online Proc. Libr. 1494, 57–63 (2012)10.1557/opl.2012.1709 ↗
14. T. Guo, G. Xu, S. Tan, N. Liu, J. Zhang, X. Zeng, J. Liang, First-principle calculations and experimental investigation on the infrared emissivity property of Mg-doped ZnO. Mater. Res. Bull. 95, 354–360 (2017)10.1016/j.materresbull.2017.08.011 ↗
15. M. Rouchdi, E. Salmani, B. Fares, N. Hassanain, A. Mzerd, Synthesis and characteristics of Mg doped ZnO thin films: Experimental and ab-initio study. Results in Physics 7, 620–627 (2017)10.1016/j.rinp.2017.01.023 ↗
16. H. Wang, A. Wang, Y. Sun, L. Wu, W. li, W. Wang, J. Zhang, L. Feng, Synthesis and characterization of F-doped MgZnO films prepared by RF magnetron co-sputtering, Applied Surface Science 503 (2020) 144273.10.1016/j.apsusc.2019.144273 ↗
17. D.J. Cohen, K.C. Ruthe, S.A. Barnett, Transparent conducting Zn1−xMgxO:(Al, In) thin films. J. Appl. Phys. 96, 459–467 (2004)10.1063/1.1760239 ↗
18. W. Yuan, L.P. Zhu, Z.Z. Ye, X.Q. Gu, Preparation of ZnMgO: Ga thin films on flexible substrates by pulsed laser deposition. Appl. Surf. Sci. 256, 1452–1454 (2009)10.1016/j.apsusc.2009.09.003 ↗
19. R.M. Mundle, H.S. Terry, K. Santiago, D. Shaw, M. Bahoura, A.K. Pradhan, K. Dasari, R. Palai, Electrical conductivity and photoresistance of atomic layer deposited Al-doped ZnO films. J. Vac. Sci. Technol., A 31, 01A146 (2012)10.1116/1.4772665 ↗
20. A.K. Ambedkar, M. Singh, V. Kumar, V. Kumar, B.P. Singh, A. Kumar, Y.K. Gautam, Structural, optical and thermoelectric properties of Al-doped ZnO thin films prepared by spray pyrolysis, Surfaces and Interfaces 19 (2020) 100504.10.1016/j.surfin.2020.100504 ↗
21. F.-K. Chen, D.-C. Tsai, Z.-C. Chang, E.-C. Chen, F.-S. Shieu, Influence of Al content and annealing atmosphere on optoelectronic characteristics of Al:ZnO thin films. Appl. Phys. A 126, 743 (2020)10.1007/s00339-020-03835-5 ↗
22. M.K. Roul, S.K. Pradhan, K.D. Song, M.J. Bahoura, RF magnetron-sputtered Al–ZnO/Ag/Al–ZnO (AAA) multilayer electrodefor transparent and flexible thin-film heater. J. Mater. Sci. 54, 7062–7071 (2019)10.1007/s10853-019-03376-0 ↗
23. M.K. Roul, B. Obasogie, G. Kogo, J.R. Skuza, R.M. Mundle, A.K. Pradhan, Transparent and flexible heaters based on Al:ZnO degenerate semiconductor. J. Appl. Phys. 122, 135110 (2017)10.1063/1.4992007 ↗
24. C.-C. Chen, H.-C. Wu, Electronic structure and optical property analysis of Al/Ga-Codoped ZnO through first-principles calculations. Materials 9, 164 (2016)10.3390/ma9030164 ↗
25. M. Toporkov, P. Mukhopadhyay, H. Ali, V. Beletsky, F. Alema, A. Osinsky, W.V. Schoenfeld, MgZnO grown by molecular beam epitaxy on N-Type B-Ga2O3 for UV Schottky barrier solar-blind photodetectors, in: Oxide-Based Materials and Devices VIII, International Society for Optics and Photonics, 2017: p. 101051N.10.1117/12.2254937 ↗
26. C.Y. Zhao, X.H. Wang, J.Y. Zhang, Z.G. Ju, C.X. Shan, B. Yao, D.X. Zhao, D.Z. Shen, X.W. Fan, Ultraviolet photodetector fabricated from metal-organic chemical vapor deposited MgZnO. Thin Solid Films 519, 1976–1979 (2011)10.1016/j.tsf.2010.10.040 ↗
27. H. Asahara, D. Takamizu, A. Inokuchi, M. Hirayama, A. Teramoto, S. Saito, M. Takahashi, T. Ohmi, Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition. Thin Solid Films 518, 2953–2956 (2010)10.1016/j.tsf.2009.09.195 ↗
28. J.S. Wrench, I.F. Brunell, P.R. Chalker, J.D. Jin, A. Shaw, I.Z. Mitrovic, S. Hall, Compositional tuning of atomic layer deposited MgZnO for thin film transistors, Appl. Phys. Lett. 105 (2014) 202109.10.1063/1.4902389 ↗
29. C.Y. Liu, H.Y. Xu, L. Wang, X.H. Li, Y.C. Liu, Pulsed laser deposition of high Mg-content MgZnO films: Effects of substrate temperature and oxygen pressure, Journal of Applied Physics 106 (2009) 073518.10.1063/1.3240328 ↗
30. R.R. Kumar, Raghvendra, S.K. Pandey, S.K. Pandey, Experimental investigation and comparative analysis of electron beam evaporated ZnO/MgxZn1-xO/CdxZn1-xO thin films for photodiode applications, Superlattices and Microstructures 150 (2021) 106787.10.1016/j.spmi.2020.106787 ↗
31. J. Sengupta, A. Ahmed, R. Labar, Structural and optical properties of post annealed Mg doped ZnO thin films deposited by the sol–gel method. Mater. Lett. 109, 265–268 (2013)10.1016/j.matlet.2013.07.104 ↗
32. S.W. Shin, G.L. Agawane, I.Y. Kim, S.H. Jo, M.S. Kim, G.-S. Heo, J.H. Kim, J.Y. Lee, Development of transparent conductive Mg and Ga co-doped ZnO thin films: Effect of Mg concentration. Surf. Coat. Technol. 231, 364–369 (2013)10.1016/j.surfcoat.2012.03.008 ↗
33. R. Dhawan, E. Panda, Mg addition in undoped and Al-doped ZnO films: Fabricating near UV transparent conductor by bandgap engineering. J. Alloy. Compd. 788, 1037–1047 (2019)10.1016/j.jallcom.2019.02.289 ↗
34. T. Törndahl, C. Platzer-Björkman, J. Kessler, M. Edoff, Atomic layer deposition of Zn1−xMgxO buffer layers for Cu(In, Ga)Se2 solar cells. Prog. Photovoltaics Res. Appl. 15, 225–235 (2007)10.1002/pip.733 ↗
35. S.R.F.S. Panahi, A. Abbasi, V. Ghods, M. Amirahmadi, Improvement of CIGS solar cell efficiency with graded bandgap absorber layer. J Mater Sci: Mater Electron 32, 2041–2050 (2021)
36. D. Thapa, J. Huso, K. Miklos, P.M. Wojcik, D.N. McIlroy, J.L. Morrison, C. Corolewski, M.D. McCluskey, T.J. Williams, M. Grant Norton, L. Bergman, UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties, J Mater Sci: Mater Electron 28 (2017) 2511–2520.10.1007/s10854-016-5825-2 ↗
37. J.D. Ye, S. Pannirselvam, S.T. Lim, J.F. Bi, X.W. Sun, G.Q. Lo, K.L. Teo, Two-dimensional electron gas in Zn-polar ZnMgO/ZnO heterostructure grown by metal-organic vapor phase epitaxy, Appl. Phys. Lett. 97 (2010) 111908.10.1063/1.3489101 ↗
38. S.-H. Jeong, J.-H. Park, B.-T. Lee, Doping effects of group-IIIA elements on physical properties of ZnMgXO (X: Al, Ga, In, Tl) transparent conducting oxide films prepared by RF magnetron sputtering. J. Alloy. Compd. 617, 52–57 (2014)10.1016/j.jallcom.2014.07.192 ↗
39. Y. Igasaki, H. Saito, The effects of deposition rate on the structural and electrical properties of ZnO: Al films deposited on (112̄0) oriented sapphire substrates. J. Appl. Phys. 70, 3613–3619 (1991)10.1063/1.349258 ↗
40. K.H. Kim, K.C. Park, D.Y. Ma, Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering. J. Appl. Phys. 81, 7764–7772 (1997)10.1063/1.365556 ↗
41. W. Xie, D. Wang, F. Guo, T. Liu, S. Jiao, J. Wang, S. Gao, Q. Yu, Y. Zhang, C. Luan, W. Cao, L. Zhao, The effect of annealing temperature on the optical and electrical properties of cubic MgZnO films grown by RF magnetron sputtering. J Mater Sci: Mater Electron 28, 1644–1651 (2017)
42. J.G. Lu, Z.Z. Ye, Y.J. Zeng, L.P. Zhu, L. Wang, J. Yuan, B.H. Zhao, Q.L. Liang, Structural, optical, and electrical properties of (Zn,Al)O films over a wide range of compositions, Journal of Applied Physics 100 (2006) 073714.10.1063/1.2357638 ↗
43. C.-H. Zhai, R.-J. Zhang, X. Chen, Y.-X. Zheng, S.-Y. Wang, J. Liu, N. Dai, L.-Y. Chen, Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition. Nanoscale Res. Lett. 11, 407 (2016)10.1186/s11671-016-1625-0 ↗
44. C. Wei, J. Xu, S. Shi, Y. Bu, R. Cao, J. Chen, J. Xiang, X. Zhang, L. Li, The improved photoresponse properties of self-powered NiO/ZnO heterojunction arrays UV photodetectors with designed tunable Fermi level of ZnO. J. Colloid Interface Sci. 577, 279–289 (2020)10.1016/j.jcis.2020.05.077 ↗
45. P.-C. Yao, S.-T. Hang, Y.-S. Lin, W.-T. Yen, Y.-C. Lin, Optical and electrical characteristics of Al-doped ZnO thin films prepared by aqueous phase deposition. Appl. Surf. Sci. 257, 1441–1448 (2010)10.1016/j.apsusc.2010.08.064 ↗
46. J. Li, S. Sathasivam, A. Taylor, C.J. Carmalt, I.P. Parkin, Single step route to highly transparent, conductive and hazy aluminium doped zinc oxide films. RSC Adv. 8, 42300–42307 (2018)10.1039/C8RA09338E ↗
47. C.Y. Lee, T.Y. Tseng, S.Y. Li, P. Lin, Effect of phosphorus dopant on photoluminescence and field-emission characteristics of Mg0.1Zn0.9O nanowires, Journal of Applied Physics 99 (2006) 024303.10.1063/1.2161420 ↗
48. S. Bai, T. Guo, Y. Zhao, R. Luo, D. Li, A. Chen, C.C. Liu, Mechanism enhancing gas sensing and first-principle calculations of Al-doped ZnO nanostructures. J. Mater. Chem. A 1, 11335–11342 (2013)10.1039/c3ta11516j ↗
49. C.M. Pelicano, H. Yanagi, Enhanced charge transport in Al-doped ZnO nanotubes designed via simultaneous etching and Al doping of H2O-oxidized ZnO nanorods for solar cell applications. J. Mater. Chem. C 7, 4653–4661 (2019)10.1039/C9TC00401G ↗
50. D.B. Potter, I.P. Parkin, C.J. Carmalt, The effect of solvent on Al-doped ZnO thin films deposited via aerosol assisted CVD. RSC Adv. 8, 33164–33173 (2018)10.1039/C8RA06417B ↗
51. H.Y. Xu, Y.C. Liu, C.S. Xu, Y.X. Liu, C.L. Shao, R. Mu, Room-temperature ferromagnetism in (Mn, N)-codoped ZnO thin films prepared by reactive magnetron cosputtering, Appl. Phys. Lett. 88 (2006) 242502.10.1063/1.2213929 ↗
52. J.F. Chang, H.L. Wang, M.H. Hon, Studying of transparent conductive ZnO: Al thin films by RF reactive magnetron sputtering. J. Cryst. Growth 211, 93–97 (2000)10.1016/S0022-0248(99)00779-4 ↗
53. B.D. Cullity, S.R. Stock, Elements of X-Ray Diffraction, Upper Saddle River, NJ, 2001.
54. Z.-C. Chang, D.-C. Tsai, E.-C. Chen, Structure and characteristics of reactive magnetron sputtered (CrTaTiVZr)N coatings. Mater. Sci. Semicond. Process. 39, 30–39 (2015)10.1016/j.mssp.2015.04.045 ↗
55. R. Kumar, N. Khare, V. Kumar, G.L. Bhalla, Effect of intrinsic stress on the optical properties of nanostructured ZnO thin films grown by rf magnetron sputtering. Appl. Surf. Sci. 254, 6509–6513 (2008)10.1016/j.apsusc.2008.04.012 ↗
56. P. Patsalas, C. Gravalidis, S. Logothetidis, Surface kinetics and subplantation phenomena affecting the texture, morphology, stress, and growth evolution of titanium nitride films. J. Appl. Phys. 96, 6234–6246 (2004)10.1063/1.1811389 ↗
57. D.-C. Tsai, Z.-C. Chang, B.-H. Kuo, B.-C. Chen, E.-C. Chen, F.-S. Shieu, Wide variation in the structure and physical properties of reactively sputtered (TiZrHf)N coatings under different working pressures. J. Alloy. Compd. 750, 350–359 (2018)10.1016/j.jallcom.2018.04.011 ↗
58. S.-H. Jeong, J.-H. Park, B.-T. Lee, Effects of Mg doping rate on physical properties of Mg and Al co-doped Zn1−x−0.02MgxAl0.02O transparent conducting oxide films prepared by rf magnetron sputtering, Journal of Alloys and Compounds 617 (2014) 180–184.10.1016/j.jallcom.2014.08.023 ↗
59. A.M. Alsaad, A.A. Ahmad, I.A. Qattan, Q.M. Al-Bataineh, Z. Albataineh, Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films. Curr. Comput.-Aided Drug Des. 10, 252 (2020)
60. A. Nakrela, N. Benramdane, A. Bouzidi, Z. Kebbab, M. Medles, C. Mathieu, Site location of Al-dopant in ZnO lattice by exploiting the structural and optical characterisation of ZnO: Al thin films. Results in Physics 6, 133–138 (2016)10.1016/j.rinp.2016.01.010 ↗
61. N. Neves, R. Barros, E. Antunes, J. Calado, E. Fortunato, R. Martins, I. Ferreira, Aluminum doped zinc oxide sputtering targets obtained from nanostructured powders: Processing and application. J. Eur. Ceram. Soc. 32, 4381–4391 (2012)10.1016/j.jeurceramsoc.2012.08.007 ↗
62. D.-T. Phan, A.A.M. Farag, F. Yakuphanoglu, G.S. Chung, Optical and photoluminescence properties of Ga doped ZnO nanostructures by sol-gel method. J Electroceram 29, 12–22 (2012)10.1007/s10832-012-9731-6 ↗
63. C. Belkhaoui, N. Mzabi, H. Smaoui, P. Daniel, Enhancing the structural, optical and electrical properties of ZnO nanopowders through (Al + Mn) doping. Results in Physics 12, 1686–1696 (2019)10.1016/j.rinp.2019.01.085 ↗
64. F. Mouzaia, D. Djouadi, A. Chelouche, L. Hammiche, T. Touam, Particularities of pure and Al-doped ZnO nanostructures aerogels elaborated in supercritical isopropanol. Arab Journal of Basic and Applied Sciences 27, 423–430 (2020)10.1080/25765299.2020.1833484 ↗
65. A. Sayari, L.E. Mir, Structural and Optical Characterization of Ni and Al Co-Doped ZnO Nanopowders Synthesized via the Sol-Gel Process. Kona Powder Part. J. 32, 154–162 (2015)10.14356/kona.2015003 ↗
66. A. Kelchtermans, P. Adriaensens, D. Slocombe, V.L. Kuznetsov, J. Hadermann, A. Riskin, K. Elen, P.P. Edwards, A. Hardy, M.K. Van Bael, Increasing the Solubility Limit for Tetrahedral Aluminium in ZnO:Al Nanorods by Variation in Synthesis Parameters, Journal of Nanomaterials 2015 (2015) e546041.10.1155/2015/546041 ↗
67. Ka Eun Lee, Mingsong Wang, Eui Jung Kim, Sung Hong Hahn, Structural, electrical and optical properties of sol–gel AZO thin films. Curr. Appl. Phys. 9, 683–687 (2009)10.1016/j.cap.2008.06.006 ↗
68. T. Minami, H. Sato, H. Nanto, S. Takata, Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering. Jpn. J. Appl. Phys. 24, L781 (1985)10.1143/JJAP.24.L781 ↗
69. T. Minami, H. Sato, H. Nanto, S. Takata, Highly Conductive and Transparent Silicon Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering. Jpn. J. Appl. Phys. 25, L776 (1986)10.1143/JJAP.25.L776 ↗
70. Z.L. Pei, C. Sun, M.H. Tan, J.Q. Xiao, D.H. Guan, R.F. Huang, L.S. Wen, Optical and electrical properties of direct-current magnetron sputtered ZnO: Al films. J. Appl. Phys. 90, 3432–3436 (2001)10.1063/1.1398070 ↗
71. T. Minami, H. Nanto, S. Shooji, S. Takata, The stability of zinc oxide transparent electrodes fabricated by R.F. magnetron sputtering, Thin Solid Films 111 (1984) 167–174.10.1016/0040-6090(84)90484-X ↗
72. N. Üzar, Enhanced optical and electrical properties of Y-doped ZnO nanoparticles having different Y concentrations. Appl. Phys. A 124, 303 (2018)10.1007/s00339-018-1725-z ↗
73. J.I. Pankove, Optical Processes in Semiconductors, Courier Corporation, 1975.
74. D.-C. Tsai, Z.-C. Chang, B.-H. Kuo, C.-M. Chen, E.-C. Chen, F.-S. Shieu, Influence of chemical composition on phase transformation and optoelectronic properties of Cu–Cr–O thin films by reactive magnetron sputtering. J. Market. Res. 8, 690–696 (2019)
75. E. Burstein, Anomalous Optical Absorption Limit in InSb. Phys. Rev. 93, 632–633 (1954)10.1103/PhysRev.93.632 ↗
76. D.-C. Tsai, Z.-C. Chang, B.-H. Kuo, Y.-H. Wang, E.-C. Chen, F.-S. Shieu, Thickness dependence of the structural, electrical, and optical properties of amorphous indium zinc oxide thin films. J. Alloy. Compd. 743, 603–609 (2018)10.1016/j.jallcom.2017.12.062 ↗
77. C. Yang, X.M. Li, X.D. Gao, X. Cao, R. Yang, Y.Z. Li, ZnMgAlO based transparent conducting oxides with modulatable bandgap. Solid State Commun. 151, 264–267 (2011)10.1016/j.ssc.2010.11.008 ↗