journal article·2014-06

Aligned CuO nanorod arrays: fabrication and anisotropic ferromagnetism

Liqing Liu, Kunquan Hong, Xing Ge, Mingxiang Xu

Applied Physics A· Volume 115· Issue 4
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Abstract

Copper oxide (CuO) is a p-type semiconductor with a band gap of 1.2 eV, which is well known in high-temperature superconductor and antiferromagnetic (AFM) materials through Cu–O–Cu super-exchange interaction. In this paper, we report the strong anisotropic ferromagnetism (FM) in aligned CuO nanorod arrays synthesized by a microwave-assisted hydrothermal method. The transmission electron microscopy (TEM) image shows that the CuO nanorod consists of a large number of smaller nanorods with almost the same growth direction. The X-ray diffraction (XRD) pattern indicates that the CuO nanorods are well crystallized with highly preferred orientation of the [020] direction. These CuO nanorod arrays show room-temperature ferromagnetism, with strong magnetic anisotropy when the magnetic field is applied perpendicular or parallel to the rod axis. This phenomenon of room-temperature ferromagnetism in those aligned CuO nanorods might originate from uncompensated surface spins and shape anisotropy of the nanorods.
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Research context

OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (28)

Show source-provided references
1. H.U. Lee, K. Ahn, S.J. Lee, J.P. Kim, H.G. Kim, S.Y. Jeong, C.R. Cho, Appl. Phys. Lett. 98, 193114 (2011)
2. H.W. Yan, J.B. Hou, Z.P. Fu, B.F. Yang, P.H. Yang, K.P. Liu, M.W. Wen, Y.J. Chen, S.Q. Fu, F.Q. Li, Mater. Res. Bull. 44, 1954 (2009)10.1016/j.materresbull.2009.06.014 ↗
3. J.Y. Liao, B.X. Lei, Y.F. Wang, J.M. Liu, C.Y. Su, D.B. Kuang, Chem. Eur. J. 17, 1352 (2011)10.1002/chem.201002244 ↗
4. J.Y. Chun, J.W. Lee, Eur. J. Inorg. Chem. 2010, 4251 (2010)10.1002/ejic.201000729 ↗
5. A. Nadarajah, R. Könenkamp, Phys. Status Solidi B 248, 334 (2011)10.1002/pssb.201046349 ↗
6. C. Jin, H. Kim, K. Baek, H.W. Kim, C. Lee, J. Mater. Sci., Mater. Electron. 21, 1154 (2010)10.1007/s10854-009-0037-7 ↗
7. K.J. Chen, F.Y. Hung, S.J. Chang, Z.S. Hu, J. Electrochem. Soc. 157, H241 (2010)
8. G.H. Waller, X.W. Du, Semicond. Sci. Technol. 26, 075001 (2011)10.1088/0268-1242/26/7/075001 ↗
9. F. Kokai, K. Uchiyama, T. Shimazu, A. Koshio, Appl. Phys. A 101, 497 (2010)10.1007/s00339-010-5886-7 ↗
10. K. Han, J.J. Wang, Y.F. Sheng, F.L. Ju, X.P. Sheng, Y.X. Wu, G. Tang, Phys. Lett. A 376, 1871 (2012)10.1016/j.physleta.2012.04.026 ↗
11. H.W. Liang, S. Liu, S.H. Yu, Adv. Mater. 22, 3925 (2010)10.1002/adma.200904391 ↗
12. J.B. Reitz, E.I. Solomon, J. Am. Chem. Soc. 120, 11467 (1998)10.1021/ja981579s ↗
13. P. Poizot, S. Laruelle, S. Grugeon, L. Dupont, J.M. Tarascon, Nature 407, 496 (2000)10.1038/35035045 ↗
14. J. Nogués, J. Sort, V. Langlais, V. Skumryev, S. Suriñach, J.S. Muñoz, M.D. Baró, Phys. Rep. 422, 65 (2005)10.1016/j.physrep.2005.08.004 ↗
15. H.M. Xiao, L.P. Zhua, X.M. Liu, S.Y. Fu, Solid State Commun. 141, 431 (2007)10.1016/j.ssc.2006.12.005 ↗
16. K. Muraleedharan, C.K. Subramaniam, N. Venkataramani, T.K. Gundu Rao, C.M. Srivastava, V. Sankaranarayan, R. Srinivasan, Solid State Commun. 76, 727 (1990)10.1016/0038-1098(90)90125-U ↗
17. M. O’Feeffe, F.S. Stone, J. Phys. Chem. Solids 23, 261 (1962)10.1016/0022-3697(62)90010-0 ↗
18. A. Punnoose, H. Magnone, M.S. Seehra, Phys. Rev. B 64, 174420 (2001)10.1103/PhysRevB.64.174420 ↗
19. C. Díaz-Guerra, M. Vila, J. Piqueras, Appl. Phys. Lett. 96, 193105 (2010)10.1063/1.3428658 ↗
20. D.Q. Gao, J. Zhang, J.Y. Zhu, J. Qi, Z.H. Zhang, W.B. Sui, H.G. Shi, D.S. Xue, Nanoscale Res. Lett. 5, 769 (2010)10.1007/s11671-010-9555-8 ↗
21. M.A. Dar, Y.S. Kim, W.B. Kim, J.M. Sohn, H.S. Shin, Appl. Surf. Sci. 254, 7477 (2008)10.1016/j.apsusc.2008.06.004 ↗
22. H.W. Qin, Z.L. Zhang, X. Liu, Y.J. Zhang, J.F. Hu, J. Magn. Magn. Mater. 322, 1994 (2010)10.1016/j.jmmm.2010.01.021 ↗
23. D.Q. Gao, G.J. Yang, J.Y. Li, J. Zhang, J.L. Zhang, D.S. Xue, J. Phys. Chem. C 114, 18347 (2010)10.1021/jp106015t ↗
24. L.Q. Liu, K.Q. Hong, T.T. Hu, M.X. Xu, J. Alloys Compd. 511, 195 (2012)10.1016/j.jallcom.2011.09.028 ↗
25. J.B. Cui, U.J. Gibson, Appl. Phys. Lett. 87, 133108 (2005)
26. P. Bender, A. Günther, A. Tschöpe, R. Birringer, J. Magn. Magn. Mater. 323, 2055 (2011)10.1016/j.jmmm.2011.03.016 ↗
27. A. Filippetti, V. Fiorentini, Phys. Rev. Lett. 95, 086405 (2005)10.1103/PhysRevLett.95.086405 ↗
28. B.X. Yang, J.M. Tranquada, G. Shirane, Phys. Rev. B 38, 174 (1988)10.1103/PhysRevB.38.174 ↗