Deep-ultraviolet SnO2 nanowire phototransistors with an ultrahigh responsivity
Source abstract
Abstract
The effect of interfacial charges between a semiconductor and a dielectric is absolutely crucial for high-performance phototransistors. In this paper, we report a novel deep-ultraviolet photodetector based on one-dimensional SnO2 nanowires (NWs) phototransistors with an ion-gel as the surrounding gate dielectric. The density of trapped carriers induced by light irradiation could be significantly amplified via the use of high-efficiency surrounding electrolyte coupling, thus, enhancing the photogating effect. The as-fabricated devices demonstrated an outstanding responsivity of 2 × 107 A/W under weak light illumination of 18.2 μW/cm2. Based on our systematic investigation of the threshold voltage shift and photodetection performance, we present a theoretical explanation for the high-performance SnO2 NWs phototransistors with the assistance of energy band analysis. The specific configuration and high-efficiency gating of the ion-gel electrolyte were particularly interesting from a photodetection point of view, providing new insights into the design and optimization of deep ultraviolet photodetection.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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