Room-temperature ferromagnetism of diamagnetically-doped ZnO aligned nanorods fabricated by vapor reaction
Source abstract
Abstract
Large-scale monocrystalline oxide-diluted magnetic semiconductor (ODMS) Zn1−xBixO nanorods arrays (NAs) were prepared within a large doping concentration range from 5% to 20% by a simple chemical vapor deposition. X-ray diffraction and high-resolution transmission electron microscopy reveal the monotonous expansion of the lattice constants with increasing Bi content, due to the effective Bi doping. In particular, room-temperature ferromagnetic (RTFM) behavior with Curie temperature over 363.7 K has been observed based on Bi-doped ZnO nanoarrays, whereas undoped ZnO NAs disappear. The RTFM origin is suggested, in which vacancies can be controlled to tune the FM. The as-formed RTFM NAs would have potential applications in many areas of advanced nanotechnology, such as new spintronic devices and magneto-optic components.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (18)
Show source-provided references
1. M. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, Science 292, 1897 (2001)10.1126/science.1060367 ↗
2. Z. Wang, X. Kong, J. Zuo, Phys. Rev. Lett. 91, 185502 (2003)
3. S. Zhou, X. Meng, X. Zhang, X. Fan, K. Zou, S. Wu, S. Lee, Micron 36, 55 (2005)10.1016/j.micron.2004.06.002 ↗
4. B. Zhang, X. Zhang, H. Gong, Z. Wu, S. Zhou, Z. Du, Phys. Lett. A 372, 2300 (2008)10.1016/j.physleta.2007.11.046 ↗
5. B. Zhang, S. Zhou, H. Wang, Z. Du, Chin. Sci. Bull. 53, 1639 (2008)10.1007/s11434-008-0247-z ↗
6. S. Zhou, P. Wang, S. Li, B. Zhang, H. Gong, Z. Du, Chin. Phys. Lett. 25, 4446 (2008)10.1088/0256-307X/25/12/073 ↗
7. T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, M. Kawasaki, Appl. Phys. Lett. 75, 3366 (1999)10.1063/1.125353 ↗
8. Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Fukumura, M. Kawasaki, P. Ahmet, T. Chikyow, S. Koshihara, H. Koinuma, Science 291, 854 (2001)10.1126/science.1056186 ↗
9. D. Buchholz, R. Chang, J. Song, J. Ketterson, Appl. Phys. Lett. 87, 082504 (2005)
10. H. Pan, J. Yi, L. Shen, R. Wu, J. Yang, J. Lin, Y. Feng, J. Ding, L. Van, J. Yin, Phys. Rev. Lett. 99, 127201 (2007)
11. C. Xu, J. Chun, D. Kimb, B. Chon, T. Joo, Appl. Phys. Lett. 91, 153104 (2007)
12. C. Xu, K. Yang, L. Huang, H. Wang, Appl. Phys. Lett. 130, 124711 (2009)
13. C. Xu, K. Rho, J. Chun, D. Kim, Nanotechnology 17, 011 (2006)
14. B. Aleman, P. Hidalgo, P. Fernández, J. Piqueras, J. Phys. D, Appl. Phys. 42, 225101 (2009)10.1088/0022-3727/42/22/225101 ↗
15. B. Karthikeyan, C. Sandeep, R. Philip, M. Baesso, J. Appl. Phys. 106, 114304 (2009)10.1063/1.3259404 ↗
16. S. Zhou, X. Zhang, X. Meng, S. Wu, S. Lee, Appl. Phys. A 81, 1647 (2005)10.1007/s00339-005-3334-x ↗
17. S. Zhou, H. Yuan, L. Liu, X. Chen, S. Lou, Y. Hao, R. Yuan, Nanoscale Res. Lett. 5, 1284 (2010)10.1007/s11671-010-9639-5 ↗
18. D. Buchholz, R. Chang, J. Song, J. Ketterson, Appl. Phys. Lett. 87, 082504 (2005)