Self-organization of polarization-dependent periodic nanostructures embedded in III–V semiconductor materials
Source abstract
Abstract
Space-selective nanostructuring inside various III–V semiconductor materials containing gallium element has been accomplished by focused irradiation of IR femtosecond laser pulses. To elucidate the formation mechanisms of periodic nanostructures, we systematically classified III–V semiconductor materials in which polarization-dependent periodic nanostructure can be formed. Self-organization of the periodic nanostructures could be induced empirically only if it is indirect bandgap semiconductor, namely GaP.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Laser Material Processing Techniques · Silicon Nanostructures and Photoluminescence · Ion-surface interactions and analysis
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