High-performance dual-gate-charge-plasma-AlGaN/GaN MIS-HEMT
Source abstract
Abstract
This paper presents a novel structure of dual-gate-charge-plasma (DG-CP) AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-DG-CP-HEMT) with gate oxides employing Al2O3. AlN as an interfacial layer between dielectric and semiconductor. Dual-gate technique for both CP and doped HEMT is used to improve the transport characteristics in the channel. CP-HEMT is used to enhance the conductance charge density and electron concentration at the interface of AlGaN and GaN. The DG-CP-HEMT is compared with DG-doped HEMT. The dual-gate structure helps in incorporating the two different layers of 2-dimensional electron gas (2DEG) for higher current density. Results showed a better performance of DG-CP-HEMT in term of various analog and RF parameters. HEMT gives better transconductance (29 mS), Cutoff frequency (11 GHz) and ON-state-to-OFF-state current ratio (1011), ON-resistance (6 Ω-cm2) and subthreshold slope (63 mV/dec). The proposed HEMT architecture can be used for RF applications due to its exemplary characteristics.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
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