journal article·2023-02

Effect of the top electrode on local piezoelectric and the ferroelectric response of PVDF thin films in PVDF/Au/Si and Ag/PVDF/Au/Si multilayers

M. S. Ravisankar, K. Pramod, R. B. Gangineni

Applied Physics A· Volume 129· Issue 2
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Abstract

The effect of the top Ag electrode on local piezoelectric and the ferroelectric response of PVDF thin films in PVDF/Au/Si and Ag/PVDF/Au/Si multilayers is probed using dual AC resonance tracking piezo force microscopy (DART-PFM). The 4 wt% PVDF thin films are prepared on Au/Si using a spin coater and the top electrode Ag is deposited with the DC magnetron sputtering method. The structural and microstructural characteristics are analyzed using a Raman spectrometer, grazing incidence X-ray diffraction, scanning electron microscopy with electron dispersive spectroscopy, and atomic force microscopy. The local piezoelectric and ferroelectric characteristics are found to be dependent upon the presence or absence of the top Ag electrode. Both the device structures display typical bi-stable ferroelectric and piezoelectric switching. The resultant non-uniform electric field due to the absence of a top electrode shows ferroelectric switching at an applied voltages ≥ ± 20 V compared to the low-voltage (down to ± 5 V) switching on Ag/PVDF/Au junctions. Furthermore, a higher d33 coefficient recorded in Ag/PVDF/Au is discussed with uniform electric field distribution in the devices. Our study reveals a clear dependency of local piezoelectric and ferroelectric characteristics upon the top electrode and its local domain switching phenomena. Graphical abstract
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Research context

OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Ferroelectric and Piezoelectric Materials · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (52)

Show source-provided references
1. H. Sun, J. Wang, Y. Wang, C. Guo, J. Gu, W. Mao, J. Yang, Y. Liu, T. Zhang, T. Gao, H. Fu, T. Zhang, Y. Hao, Z. Gu, P. Wang, H. Huang, Y. Nie, Nat Commun. 13(1), 4332 (2022)10.1038/s41467-022-31763-w ↗
2. Bo. Li, M. Yuan, S. Zhang, R. Rajagopalan, M.T. Lanaga, Appl. Phys. Lett. 113, 193903 (2018)
3. A. Laudari, A.R. Mazza, A. Daykin, S. Khanra, K. Ghosh, F. Cummings, T. Muller, P.F. Miceli, S. Guha, Phys. Rev. Appl. 10, 014011 (2018)10.1103/PhysRevApplied.10.014011 ↗
4. S. Badatya, D.K. Bharti, N. Sathish, A.K. Srivastava, M.K. Gupta, ACS Appl. Mater. Interfaces 13(23), 27245–27254 (2021)10.1021/acsami.1c02237 ↗
5. J.Y. Jo, H.S. Han, J.-G. Yoon, T.K. Song, S.-H. Kim, T.W. Noh, Phys. Rev. Lett. 99, 267602 (2007)10.1103/PhysRevLett.99.267602 ↗
6. J.Y. Jo, S.M. Yang, T.H. Kim, H.N. Lee, J.-G. Yoon, S. Park, Y. Jo, M.H. Jung, T.W. Noh, Phys. Rev. Lett. 102, 045701 (2009)
7. A. Grigoriev, D.-H. Do, D.M. Kim, C.-B. Eom, B. Adams, E.M. Dufresne, P.G. Evans, Phys. Rev. Lett. 96, 187601 (2006)10.1103/PhysRevLett.96.187601 ↗
8. P. Martins, A.C. Lopes, S. Lanceros-Mendez, Prog. Polym. Sci. 39, 683–706 (2014)10.1016/j.progpolymsci.2013.07.006 ↗
9. Z.M. Dang, Y.H. Lin, C.W. Nan, Adv. Mater. 15(19), 1625–1629 (2003)10.1002/adma.200304911 ↗
10. Z. Xiao, Q. Dong, P. Sharma, Y. Yuan, B. Mao, W. Tian, A. Gruverman, J. Huang, Adv. Energy Mater. 3(12), 1581–1588 (2013)10.1002/aenm.201300396 ↗
11. W. Gao, L. Chang, Lu. He Ma, J.Y. You, J. Liu, Z. Liu, J. Wang, G. Yuan, NPG Asia Mater. 7, 189 (2015)10.1038/am.2015.54 ↗
12. N. Van Huynh, J.-H. Lee, D. Whang, D.J. Kang, Nano. Micro. Lett. 7(1), 35–41 (2015)10.1007/s40820-014-0016-2 ↗
13. V. Sencadas, P. Martins, A. Pitaes, M. Benelmekki, J.L.G. Ribelles, S. Lanceros-Mendez, Langmuir 27, 7241–7249 (2011)10.1021/la2008864 ↗
14. S.L. Miller, R.D. Nasby, J.R. Schwank, M.S. Rodgers, P.V. Dressendorfer, J. Appl. Phys. 68, 6463 (1990)10.1063/1.346845 ↗
15. G. Canavese, S. Stassi, V. Cauda, A. Verna, P. Motto, A. Chiodoni, S.L. Marasso, D. Demarchi, IEEE Sens. J. 14, 2237–2244 (2013)10.1109/JSEN.2013.2248143 ↗
16. R. Bouregba, B. Vilquin, G. Le Rhun, G. Poullain, B. Domenges, Rev. Sci. Instrum. 74, 4429 (2003)10.1063/1.1606533 ↗
17. E.A. Pecherskaya, Meas. Tech. 50, 1101–1107 (2007)10.1007/s11018-007-0205-1 ↗
18. R. Chikkonda, A. Ravindran, S. Saikia, A.R.T. Sathyanathan, A. Chelvane, A. Subramanian, J.R.K. Chinnayya, R.B. Ganginen, J. Appl Polym Sci. 138(11), 50018 (2020)10.1002/app.50018 ↗
19. J. Roy, R. Chikkonda, G. Kishor, A.R.T. Sathyanathan, K.C.J. Raju, R.B. Gangineni, J. Appl Polym. Sci. 139, 52187 (2022)10.1002/app.52187 ↗
20. A. Gruverman, O. Kolosov, J. Hatano, K. Takahashi, H. Tokumoto, J. Vac. Sci. Technol. B 13, 1095 (1995)10.1116/1.587909 ↗
21. A. Gruverman, S.V. Kalinin, J. Mater. Sci. 41, 107–116 (2006)10.1007/s10853-005-5946-0 ↗
22. S.V. Kalinin, D.A. Bonnell, Phys. Rev. B. 65, 1254081 (2002)10.1103/PhysRevB.65.125408 ↗
23. S.V. Kalinin, A. Rar, S. Jesse, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 53, 2226–2252 (2006)10.1109/TUFFC.2006.169 ↗
24. S.V. Kalinin, A. Gruverman, Scanning probe microscopy: electrical and electromechanical phenomena at the nanoscale, vol. 1 (Springer, New York, 2007)10.1007/978-0-387-28668-6 ↗
25. A. Gruverman, Recent advances in functional testing of ferroelectric nanostructures. Ferroelectrics 433(1), 88–106 (2012)10.1080/00150193.2012.678145 ↗
26. S.V. Kalinin, B.J. Rodriguez, S.H. Kim, S.K. Hong, A. Gruverman, E.A. Eliseev, Appl. Phys. Lett. 92, 152906 (2008)10.1063/1.2905266 ↗
27. P. Bintachitt, S. Trolier-McKinstry, K. Seal, S. Jesse, S.V. Kalinin, Appl. Phys. Lett. 94, 042906 (2009)10.1063/1.3070543 ↗
28. A. Gruverman, M. Alexe, D. Meier, Nat. Commun. 10, 1661 (2019)10.1038/s41467-019-09650-8 ↗
29. K. Pramod, R.B. Gangineni, Org. Electron. 42, 47–51 (2017)10.1016/j.orgel.2016.12.014 ↗
30. M.S. Ravisankar, K. Pramod, R.B. Gangineni, J. Mater. Sci. 30, 20716–20724 (2019)
31. Na. Liu, R. Dittmer, R.W. Stark, C. Dietz, Nanoscale 7, 11787–11796 (2015)10.1039/C5NR01326G ↗
32. A. Gannepalli, D.G. Yablon, A.H. Tsou, R. Proksch, Nanotechnology 22, 355705 (2011)10.1088/0957-4484/22/35/355705 ↗
33. Y. Sun, Hu. Zhigang, D. Zhao, K. Zeng, Nanoscale 9, 12163–12169 (2017)10.1039/C7NR04245K ↗
34. H. Uršič, U. Prah, Proc. R. Soc. A 475, 20180782 (2019)10.1098/rspa.2018.0782 ↗
35. N.C. Miller, H.M. Grimm, W.S. Horne, G.R. Hutchison, Nanoscale Adv. 1, 4834–4843 (2019)10.1039/C9NA00638A ↗
36. S.J. Kang, Y.J. Park, I. Bae, K.J. Kim, H.-C. Kim, S. Bauer, E.L. Thamas, C. Park, Adv. Funct. Mater. 19, 2812–2818 (2009)10.1002/adfm.200900589 ↗
37. M. Li, H.J. Wondergem, M.-J. Spijkman, K. Asadi, I. Katsouras, P.W.M. Blom, D.M. de Leeuw, Nat. Mater. 12, 433–438 (2013)10.1038/nmat3577 ↗
38. K. Pramod, R.B. Gangineni, Curr. Appl. Phys. 17, 1469–1475 (2017)10.1016/j.cap.2017.08.012 ↗
39. B.B. Tian, J.L. Wang, S. Fusil, Y. Liu, X.L. Zhao, S. Sun, H. Shen, T. Lin, J.L. Sun, C.G. Duan, M. Bibes, A. Barthélémy, B. Dkhil, V. Garcia, X.J. Meng, J.H. Chu, Nat. Commun. 7, 11502 (2016)10.1038/ncomms11502 ↗
40. R. Gyse, I. Stolichnov, A.K. Tagantsev, N. Setter, P. Mokrý, J. Appl. Phys. 103, 084120 (2008)
41. E.L. Colla, I. Stolichnov, P.E. Bradely, N. Setter, Appl. Phys. Lett. 82, 1604 (2003)10.1063/1.1559951 ↗
42. S.V. Kalinin, D.A. Bonnel, Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces. Phys. Rev. 65, 125408 (2002)10.1103/PhysRevB.65.125408 ↗
43. A. Gruverman, Appl. Phys. Lett. 75, 1452 (1999)10.1063/1.124722 ↗
44. H. Fujisawa, T. Yagi, M. Shimizu, H. Niu, Ferroelectrics 269(1), 21–26 (2002)10.1080/713716067 ↗
45. D.J. Kim, J.Y. Jo, T.H. Kim, S.M. Yang, B. Chen, Y.S. Kim, T.W. Noh, Appl. Phys. Lett. 91, 132903 (2007)
46. P. Gerber, A. Roelofs, C. Kügeler, U. Böttger, R. Waser, J. Appl. Phys. 96, 2800 (2004)10.1063/1.1775306 ↗
47. M. Mai, S. Ke, P. Lin, X. Zeng, APL Mater. 4, 046107 (2016)
48. J.H. Wang, Smart Mater. Struct. 26, 105045 (2017)10.1039/9781788010542 ↗
49. M. Stewart, S. Lepadatu, L.N. McCartney, M.G. Cain, L. Wright, J. Crain, D.M. Newns, G.J. Martyna, APL Mater. 3, 026103 (2015)10.1063/1.4907954 ↗
50. Y. Ishibashi, Y. Takagi, J. Phys. Soc. Jpn. 31, 506–510 (1971)10.1143/JPSJ.31.506 ↗
51. H. Orihara, S. Hashimoto, Y. Ishibashi, J. Phys. Soc. Jpn. 63, 1031–1035 (1994)10.1143/JPSJ.63.1031 ↗
52. Y. Ishibashi, Integr. Ferroelectr. 9, 57–61 (1995)10.1080/10584589508012906 ↗