Synthesis of enhanced (Sn$$0.05$$Sb$$0.15$$)$$_2$$(Te$$0.02$$Se$$0.18$$)$$_3$$ crystals for multi-sensing applications
Source abstract
Abstract
Crystals of (Sn(0.05)Sb(0.15))(_2)(Te(0.02)Se(0.18))(_3) have been grown by the direct vapor transport technique. The challenge of intrinsic low electrical conductivity of antimony triselenide (Sb(_2)Se(_3)) was overcome by using tin (Sn) and tellurium (Te) as doping agents to synthesize (Sn(0.05)Sb(0.15))(_2)(Te(0.02)Se(0.18))(_3) alloy. The chemical composition and surface topology analysis have been carried out using energy dispersive analysis of X-ray and scanning electron microscope, respectively. The structural properties of grown crystals were characterized by powder X-ray diffraction (XRD) technique and have been compared with data of Sb(_2)Se(_3) crystal. The XRD analysis revealed the orthorhombic structure of grown crystals. The spot pattern in the selected area electron diffraction image indicates good crystalline nature of grown crystals. Different phonon modes were analyzed using Raman spectroscopy. The optical properties have been characterized using diffuse reflectance spectroscopy. The photo-detection and trap depth parameters were examined for different wavelengths and illumination intensities. Also, non-oxide semiconductor-based gas sensor and human breathing sensor have been studied. The effect of doping was clearly seen in the enhancement of sensing properties of the grown crystals.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Gas Sensing Nanomaterials and Sensors · Solid-state spectroscopy and crystallography
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (63)
Show source-provided references
1. Y. Zhou, L. Wang, S. Chen, S. Qin, X. Liu, J. Chen, D.J. Xue, M. Luo, Y. Cao, Y. Cheng et al., Nat. Photonics 9(6), 409 (2015)10.1038/nphoton.2015.78 ↗
2. Y. Zhou, M. Leng, Z. Xia, J. Zhong, H. Song, X. Liu, B. Yang, J. Zhang, J. Chen, K. Zhou et al., Adv. Energy Mater. 4(8), 1301846 (2014)10.1002/aenm.201301846 ↗
3. R. Huang, J. Zhang, F. Wei, L. Shi, T. Kong, G. Cheng, Adv. Func. Mater. 24(23), 3581 (2014)10.1002/adfm.201304176 ↗
4. S. Chen, X. Qiao, F. Wang, Q. Luo, X. Zhang, X. Wan, Y. Xu, X. Fan, Nanoscale 8(4), 2277 (2016)10.1039/C5NR06384A ↗
5. T. Zhai, L. Li, X. Wang, X. Fang, Y. Bando, D. Golberg, Adv. Func. Mater. 20(24), 4233 (2010)10.1002/adfm.201001259 ↗
6. A. Mavlonov, T. Razykov, F. Raziq, J. Gan, J. Chantana, Y. Kawano, T. Nishimura, H. Wei, A. Zakutayev, T. Minemoto et al., Sol. Energy 201, 227 (2020)10.1016/j.solener.2020.03.009 ↗
7. Y. Liang, Y. Wang, J. Wang, S. Wu, D. Jiang, J. Lian, RSC Adv. 6(14), 11501 (2016)10.1039/C5RA23542A ↗
8. T.Y. Ko, M. Shellaiah, K.W. Sun, Sci. Rep. 6(1), 1 (2016)10.1038/s41598-016-0001-8 ↗
9. L. Zhang, Y. Li, C. Li, Q. Chen, Z. Zhen, X. Jiang, M. Zhong, F. Zhang, H. Zhu, ACS Nano 11(12), 12753 (2017)10.1021/acsnano.7b07512 ↗
10. X. Wang, S.S. Yee, W.P. Carey, Sens. Actuators B Chem. 25(1–3), 454 (1995)10.1016/0925-4005(94)01395-0 ↗
11. D. Choi, Y. Jang, J. Lee, G.H. Jeong, D. Whang, S.W. Hwang, K.S. Cho, S.W. Kim, Sci. Rep. 4, 6714 (2014)10.1038/srep06714 ↗
12. R.J. Mehta, C. Karthik, W. Jiang, B. Singh, Y. Shi, R.W. Siegel, T. Borca-Tasciuc, G. Ramanath, Nano Lett. 10(11), 4417 (2010)10.1021/nl1020848 ↗
13. T. Zhai, Y. Ma, L. Li, X. Fang, M. Liao, Y. Koide, J. Yao, Y. Bando, D. Golberg, J. Mater. Chem. 20(32), 6630 (2010)10.1039/c0jm01013h ↗
14. S. Marian, K. Potje-Kamloth, D. Tsiulyanu, H.D. Liess, Thin Solid Films 359(1), 108 (2000)10.1016/S0040-6090(99)00707-5 ↗
15. R.D. Shannon, Acta crystallographica section A: crystal physics, diffraction, theoretical and general crystallography 32(5), 751 (1976)
16. Z. Yi, Y. Qian, S. Jiang, Y. Li, N. Lin, Y. Qian, Chem. Eng. J. 379, 122352 (2020)10.1016/j.cej.2019.122352 ↗
17. R. Vadapoo, S. Krishnan, H. Yilmaz, C. Marin, Physica Status Solidi (b) 248(3), 700 (2011)10.1002/pssb.201046225 ↗
18. K. Chandrasekharan, A. Kunjomana, Turk. J. Phys. 33(4), 209 (2009)
19. S. Chen, X. Qiao, Z. Zheng, M. Cathelinaud, H. Ma, X. Fan, X. Zhang, J. Mater. Chem. C 6(24), 6465 (2018)10.1039/C8TC01683F ↗
20. G. Williamson, W. Hall, Acta Metall. 1(1), 22 (1953)10.1016/0001-6160(53)90006-6 ↗
21. F.W. Gayle, F.S. Biancaniello, Nanostruct. Mater. 6(1–4), 429 (1995)10.1016/0965-9773(95)00088-7 ↗
22. E.R. Shaaban, N. Afify, A. El-Taher, J. Alloys Compd. 482(1–2), 400 (2009)10.1016/j.jallcom.2009.04.033 ↗
23. P. Vidal-Fuentes, M. Guc, X. Alcobe, T. Jawhari, M. Placidi, A. Pérez-Rodríguez, E. Saucedo, V.I. Roca, 2D Mater. 6(4), 045054 (2019)10.1088/2053-1583/ab4029 ↗
24. H. Song, T. Li, J. Zhang, Y. Zhou, J. Luo, C. Chen, B. Yang, C. Ge, Y. Wu, J. Tang, Adv. Mater. 29(29), 1700441 (2017)10.1002/adma.201700441 ↗
25. S.H. Chaki, M.D. Chaudhary, M. Deshpande, Mater. Res. Bull. 63, 173 (2015)10.1016/j.materresbull.2014.12.013 ↗
26. S. Wang, N. Ye, J. Am. Chem. Soc. 133(30), 11458 (2011)10.1021/ja204179g ↗
27. F. Shan, B. Kim, G. Liu, Z. Liu, J. Sohn, W. Lee, B. Shin, Y. Yu, J. Appl. Phys. 95(9), 4772 (2004)10.1063/1.1690091 ↗
28. Z.M. Gibbs, A. LaLonde, G.J. Snyder, New J. Phys. 15(7), 075020 (2013)10.1088/1367-2630/15/7/075020 ↗
29. S.G. Rathod, R. Bhajantri, V. Ravindrachary, P. Pujari, G. Nagaraja, J. Naik, V. Hebbar, H. Chandrappa, Bull. Mater. Sci. 38(5), 1213 (2015)10.1007/s12034-015-1002-0 ↗
30. M. Iovu, S. Shutov, V. Arkhipov, G. Adriaenssens, J. Non-Cryst. Solids 299, 1008 (2002)10.1016/S0022-3093(01)01067-5 ↗
31. C. Vyas, P. Pataniya, C.K. Zankat, V. Pathak, K. Patel, G. Solanki, Mater. Sci. Semicond. Process. 71, 226 (2017)10.1016/j.mssp.2017.08.003 ↗
32. H. Desai, J. Dhimmar, B. Modi, Optik 127(16), 6377 (2016)10.1016/j.ijleo.2016.04.109 ↗
33. J.T. Randall, M.H.F. Wilkins, Proc. R. Soc. Lond. Ser. A Math. Phys. Sci. 184(999), 365 (1945)
34. J. Yao, Z. Zheng, G. Yang, ACS Appl. Mater. Interfaces 8(20), 12915 (2016)10.1021/acsami.6b03691 ↗
35. C.H. Ge, H.L. Li, X.L. Zhu, A.L. Pan, Chin. Phys. B 26(3), 034208 (2017)10.1088/1674-1056/26/3/034208 ↗
36. M. Yu, H. Li, H. Liu, F. Qin, F. Gao, Y. Hu, M. Dai, L. Wang, W. Feng, P. Hu, ACS Appl. Mater. Interfaces 10(50), 43299 (2018)10.1021/acsami.8b15317 ↗
37. M. Al-Kuhaili, M. Mekki, S. Abdalla, Thin Solid Films 686, 137412 (2019)10.1016/j.tsf.2019.137412 ↗
38. X. Bao, R. James, T. Schlesinger, in Semiconductors and Semimetals, vol. 43 (Elsevier, 1995), pp. 169–21810.1016/S0080-8784(08)62744-1 ↗
39. J. Bornstein, R.H. Bube, J. Appl. Phys. 61(7), 2676 (1987)10.1063/1.337901 ↗
40. R.H. Bube et al., Photoconductivity of Solids (RE Krieger Pub. Co., New York, 1978)
41. P. Patel, J. Dhimmar, B. Modi, H. Desai, J. Mater. Sci. Mater. Electron. 1–9 (2020)
42. R. Sarma, N. Mazumdar, Indian J. Phys. 78, 389 (2004)
43. C. Chen, D.C. Bobela, Y. Yang, S. Lu, K. Zeng, C. Ge, B. Yang, L. Gao, Y. Zhao, M.C. Beard et al., Front. Optoelectron. 10(1), 18 (2017)10.1007/s12200-017-0702-z ↗
44. M. Aven, J.S. Prener, Physics and Chemistry of II–VI Compounds (Noord-Hollandsche UM, New York, 1967)
45. B. Meyer, W. Stadler, J. Cryst. Growth 161(1–4), 119 (1996)10.1016/0022-0248(95)00620-6 ↗
46. B. Srivastava, S. Singh, Indian J. Pure Appl. Phys. 8(11), 716 (1970)
47. A. Grabowski, M. Nowak, P. Tzanetakis, Thin Solid Films 283(1–2), 75 (1996)10.1016/0040-6090(95)08558-0 ↗
48. C.K. Zankat, P. Pataniya, G. Solanki, K. Patel, V. Pathak, Mater. Lett. 221, 35 (2018)10.1016/j.matlet.2018.03.065 ↗
49. P. Perumal, R.K. Ulaganathan, R. Sankar, Y.M. Liao, T.M. Sun, M.W. Chu, F.C. Chou, Y.T. Chen, M.H. Shih, Y.F. Chen, Adv. Func. Mater. 26(21), 3630 (2016)10.1002/adfm.201600081 ↗
50. A. Quigg, W.C. Chin, C.S. Chen, S. Zhang, Y. Jiang, A.J. Miao, K.A. Schwehr, C. Xu, P.H. Santschi, ACS Sustain. Chem. Eng. 1(7), 686 (2013)10.1021/sc400103x ↗
51. H. Desai, P. Patel, J. Dhimmar, B. Modi, Solid State Commun. 113910 (2020)10.1016/j.ssc.2020.113910 ↗
52. S. Mishra, R. Srivastava, S. Prakash, R. Yadav, A. Panday, Opto-Electron. Rev. 18(4), 467 (2010)10.2478/s11772-010-0037-4 ↗
53. P.K. Kalita, B. Sarma, H. Das, Bull. Mater. Sci. 26(6), 613 (2003)10.1007/BF02704325 ↗
54. P. Shankar, J.B.B. Rayappan, Sci. Lett. J. 4(4), 126 (2015)
55. G.F. Fine, L.M. Cavanagh, A. Afonja, R. Binions, Sensors 10(6), 5469 (2010)10.3390/s100605469 ↗
56. Y. He, T. Zhang, W. Zheng, R. Wang, X. Liu, Y. Xia, J. Zhao, Sens. Actuat. B Chem. 146(1), 98 (2010)10.1016/j.snb.2010.02.030 ↗
57. B.M. Kulwicki, J. Am. Ceram. Soc. 74(4), 697 (1991)10.1111/j.1151-2916.1991.tb06911.x ↗
58. J.H. Anderson Jr., G.A. Parks, J. Phys. Chem. 72(10), 3662 (1968)10.1021/j100856a051 ↗
59. Y.C. Yeh, T.Y. Tseng, D.A. Chang, J. Am. Ceram. Soc. 73(7), 1992 (1990)10.1111/j.1151-2916.1990.tb05257.x ↗
60. T.M. Swager, Acc. Chem. Res. 31(5), 201 (1998)10.1021/ar9600502 ↗
61. P.K. Kannan, R. Saraswathi, J.B.B. Rayappan, Sens. Actuat. A 164(1–2), 8 (2010)
62. V. Solanki, S. Krupanidhi, K. Nanda, ACS Appl. Mater. Interfaces 9(47), 41428 (2017)10.1021/acsami.7b12127 ↗
63. M. Righettoni, A. Tricoli, S.E. Pratsinis, Anal. Chem. 82(9), 3581 (2010)10.1021/ac902695n ↗