Solution growth of chalcopyrite Cu(In 1− x Ga x )Se 2 single crystals for high open-circuit voltage photovoltaic device
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Abstract
Abstract I–III–VI 2 Chalcopyrite Cu(In 1− x Ga x )Se 2 (CIGS) has attracted attention as absorbing layer in photovoltaic (PV) device. In this study, we investigated the fundamental properties of CIGS single crystals, and fabricated single crystal-based PV device. CIGS single crystals without secondary phase were successfully grown by In-solvent traveling heater method (THM). The conversion of conduction type from n- to p-type can be observed above 0.3 of Ga ratio x because of high acceptor defect concentration. PV device based on high-quality CIGS bulk single crystal demonstrates high open-circuit voltage of 0.765 V with the efficiency of 12.6%.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Research Center for Sustainable Energy & Environmental Engineering, University of Miyazaki , Miyazaki 889-2192 , Japan
Department of Applied Physics and Electronic Engineering, University of Miyazaki , Miyazaki 889-2192 , Japan
Carbon Neutral Development Division, Toyota Motor Corporation , Shizuoka 410-1193 , Japan
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