Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory
Source abstract
Abstract
Memory devices based on the reversible resistance switching of various materials are attractive for today’s semiconductor technology. The reproducible current hysteresis (resistance switching) characteristics of reduced TiO2 single crystal are demonstrated. Basic models concerning the filamentary and Schottky barrier models are discussed. Good retention characteristics are exhibited by the accurate controlling of the annealing parameters.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials
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References (23)
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