Room temperature ferromagnetism in single-phase Zn1−x Mn x S diluted magnetic semiconductors fabricated by co-precipitation technique
Source abstract
Abstract
In this study, we have prepared Mn-doped zinc sulfide diluted magnetic semiconductors with varying manganese concentrations (x Mn = 0.00, 0.02, 0.04, 0.06, 0.08, 0.10 mol%) using co-precipitation method. The single-phase nano-crystalline Zn1− x Mn x S powders have been confirmed with X-ray diffraction. The residual strains also have been calculated, and have been observed to affect the lattice constants. The surface morphology is investigated with scanning electron microscopy, which illustrates the presence of smaller grains, which coalescence to form larger grains. The presence of the ferromagnetism at room temperature has been observed; however, significant paramagnetic contribution is also present. The observed weak ferromagnetism might be due to the structural and surface imperfections. The single-phase Zn1− x Mn x S exhibiting magnetism at room temperature evidences the potential spintronic applications.
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Research context
OpenAlex topics: ZnO doping and properties · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (47)
Show source-provided references
1. E.Y. Tsymbal, I. Zutic, Handbook of Spin Transport and Magnetism (CRC Press-Science, Boca Raton, 2011), p. 808
2. A. Dussaux, B. Georges, J. Grollier, V. Cros, A.V. Khvalkovskiy, A. Fukushima, M. Konoto, H. Kubota, K. Yakushiji, S. Yuasa, K.A. Zvezdin, K. Ando, A. Fert, Large microwave generation from current-driven magnetic vortex oscillators in magnetic tunnel junctions. Nat Commun 1, 1–6 (2010)10.1038/ncomms1006 ↗
3. T. Yu-Feng, Hu Shu-Jun, Y. Shi-Shen, M. Liang-Mo, Oxide magnetic semiconductors: materials, properties, and devices. Chin Phys B 22, 088505 (2013)10.1088/1674-1056/22/8/088505 ↗
4. R. Geng, T.T. Daugherty, K. Do, H.M. Luong, T.D. Nguyen, A review on organic spintronic materials and devices: I. Magnetic field effect on organic light emitting diodes. J Sci Adv Mater Dev 1, 128–140 (2016)
5. T. Fujisawa, Quantum information technology based on single electron dynamics. NTT Tech Rev 1, 41–45 (2003)
6. M. Hassan, G. Springholz, R.T. Lechner, H. Groiss, R. Kirchschlager, G. Bauer, Molecular beam epitaxy of single phase GeMnTe with high ferromagnetic transition temperature. J Cryst Growth 323, 363–367 (2011)10.1016/j.jcrysgro.2010.10.135 ↗
7. G. Murtaza, R. Ahmad, M.S. Rashid, M. Hassan, A. Hussnain, M.A. Khan, M.E. ul Haq, M.A. Shafique, S. Riaz, Structural and magnetic studies on Zr doped ZnO diluted magnetic semiconductor. Curr Appl Phys 14, 176 (2014)10.1016/j.cap.2013.11.002 ↗
8. M. Cygorek, P.I. Tamborenea, V.M. Axt, Carrier-impurity spin transfer dynamics in paramagnetic II–VI diluted magnetic semiconductors in the presence of a wave-vector-dependent magnetic field. Phys Rev B 93, 205201 (2016)10.1103/PhysRevB.93.205201 ↗
9. R.T. Lechner, G. Springholz, M. Hassan, H. Groiss, R. Kirchschlager, J. Stangl, N. Hrauda, G. Bauer, Phase separation and exchange biasing in the ferromagnetic IV–VI semiconductor Ge1− x Mn x Te. Appl Phys Lett 97, 023101 (2010)10.1063/1.3459149 ↗
10. H. Przybylińska, G. Springholz, R.T. Lechner, M. Hassan, M. Wegscheider, W. Jantsch, G. Bauer, Magnetic field induced ferroelectric polarization reversal in the multiferroic Ge1−x Mn x Te semiconductor. Phys Rev Lett 112, 047202 (2014)10.1103/PhysRevLett.112.047202 ↗
11. R. Bouzerar, D. May, U. Low, D. Machon, P. Melinon, S. Zhou, G. Bouzerar, Carrier-induced ferromagnetism in the insulating Mn-doped III–V semiconductor InP. Phys Rev B 94, 094437 (2016)10.1103/PhysRevB.94.094437 ↗
12. V. Dierolf, I. Ferguson, J. Zavada, Rare Earth and Transition Metal Doping of Semiconductor Materials (Woodhead Publishing, Sawston, 2016)
13. M. Kneip, Magnetization Dynamics in Diluted Magnetic Semiconductor Heterostructures (GRIN Verlag, Munich, 2009), p. 280
14. C. Caetano, M. Marques, L.G. Ferreira, L.K. Teles, Anomalous lattice parameter of magnetic semiconductor alloys. Appl Phys Lett 94, 241914 (2009)10.1063/1.3154560 ↗
15. T.A. Abdel-Baset, Y.W. Fang, B. Anis, C.G. Duan, M.A. Hafiez, Structural and magnetic properties of transition-metal-doped Zn1−x Fe x O. Nanoscale Res Lett 11, 115 (2016)10.1186/s11671-016-1332-x ↗
16. D.L. Li, Q.L. Ma, S.G. Wang, R.C.C. Ward, T. Hesjedal, X.-G. Zhang, A. Kohn, E. Amsellem, G. Yang, J.L. Liu, J. Jiang, H.X. Wei, X.F. Han, Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films. Sci Rep 4, 7277 (2014)10.1038/srep07277 ↗
17. S.C. Das, R.J. Green, J. Podder, T.Z. Regier, G.S. Chang, A. Moewes, Band gap tuning in ZnO through Ni doping via spray pyrolysis. J Phys Chem C 117, 12745 (2013)10.1021/jp3126329 ↗
18. K.L. Jabłonska, R.J. Iwanowski, Z. Gołacki, A. Traverse, S. Pizzini, A. Fontaine, I. Winter, J. Hormes, Local electronic structure of ZnS and ZnSe doped by Mn, Fe, Co, and Ni from X-ray-absorption near-edge structure studies. Phys Rev B 53, 3 (1996)
19. S.W. Lu, B.I. Lee, Z.L. Wang, W. Tong, B.K. Wagner, W. Park, C.J. Summers, J Lumin 92, 73–78 (2001)
20. W.Q. Peng, S.C. Qu, G.W. Cong, X.Q. Zhang, Z.G. Wang, J Cryst Growth 282, 179–185 (2005)10.1016/j.jcrysgro.2005.05.005 ↗
21. Z.H. Wang, D.Y. Geng, D. Li, Z.D. Zhan, J Mater Res 22, 2376–2383 (2007)10.1557/jmr.2007.0317 ↗
22. N. Tsujii, H. Kitazawa, G. Kido, J Appl Phys 93, 6957 (2003)10.1063/1.1540034 ↗
23. M. Zuo, S. Tan, G.P. Li, S.Y. Zhang, Science 55, 219–223 (2012)
24. P.V.B. Lakshmi, K. Sakthiraj, K. Ramachandran, J Cryst Res Technol 44, 153–158 (2008)10.1002/crat.200800271 ↗
25. I. Polat, S. Aksu, M. Altunbas, S. Yilmaz, E. Bacaksiz, J Solid State Chem 184, 2683–2689 (2011)10.1016/j.jssc.2011.07.017 ↗
26. C.S. Pathak, P.K. Pathak, P. Kumar, M.K. Mandal, J Ovonic Res 8, 15–20 (2012)
27. A.L. Patterson, Phys Rev 56, 978 (1939)10.1103/PhysRev.56.978 ↗
28. H.P. Klug, L.E. Alexander, X-ray diffraction procedures. Willey, New York 3, 151 (1954)
29. R.N. Bhargava, D. Gallagher, X. Hong, A. Nurmikko, Phys Rev Lett 72, 416–419 (1994)10.1103/PhysRevLett.72.416 ↗
30. A.K. Zak, W.H.A. Majid, M.E. Abrishami, R. Yousefi, Solid State Sci 13, 251–256 (2011)10.1016/j.solidstatesciences.2010.11.024 ↗
31. V.D. Mote, Y. Purushotham, B.N. Dole, J Theoret Appl Phys 6, 1–8 (2012)10.1186/2251-7235-6-1 ↗
32. M.R. Vaezi, S.H.M.S. Ghassemi, A. Shokuhfar, Mater Sci Poland 26, 602–608 (2008)
33. J.I. Langford, R.J. Cernik, D. Louer, J Appl Crystallogr 24, 913–919 (1991)10.1107/S0021889891004375 ↗
34. L.S. Devi, K.N. Devi, B.I. Sharma, H.N. Sarma, IOSR J Appl Phys 6, 6–14 (2014)10.9790/4861-06220614 ↗
35. J. Singh, Electronic and Optoelectronic Properties of Semiconductor Structures (Cambridge University Press, Cambridge, 2007)
36. N. Tahir, S.T. Hussain, M. Usman, S.K. Hasanain, A. Mumtaz, J Appl Surf Sci 255, 8506–8510 (2009)10.1016/j.apsusc.2009.06.003 ↗
37. C. Bi, L.Q. Pan, M. Xu, L.Q. Qin, J. H. Yin. Ninth IEEE Conference on Nanotechnology, pp. 874–877 (2009)
38. W.S. Ni, Y.J. Lin, C.J. Liu, Y.W. Yang, L. Horng, J Alloy Compd 556, 178–181 (2013)10.1016/j.jallcom.2012.12.142 ↗
39. M. Ragam, N. Sankar, K. Ramachandran, Defect Diffus Forum 318, 11–21 (2011)10.4028/www.scientific.net/DDF.318.11 ↗
40. Y. Koseoglu, Y.C. Durmaz, R. Yilgin, Ceram Int 40, 10685–10691 (2014)10.1016/j.ceramint.2014.03.053 ↗
41. D. Gao, G. Yang, J. Zhang, Z. Zhu, M. Si, D. Xue, Appl Phys Lett 99, 52502–052503 (2011)10.1063/1.3622303 ↗
42. G. Zhu, S. Zhang, Z. Xu, J. Ma, X. Shen, J Am Chem Soc 133, 15605–15612 (2011)10.1021/ja2049258 ↗
43. F. Zhu, S. Dong, G. Yang, Optoelectron Adv Mater Rapid Commun 4, 2072–2075 (2012)
44. P.K. Sharma, R.K. Dutta, A.C. Pandey, S. Layek, H.C. Verma, J Magn Magn Mater 321, 2587–2591 (2009)10.1016/j.jmmm.2009.03.043 ↗
45. N. Eryong, L. Donglai, Z. Yunsen, B. Xue, Y. Liang, J. Yong, J. Zhifeng, S. Xiaosong, Photoluminescence and magnetic properties of Fe-doped ZnS nano-particles synthesized by chemical co-precipitation. Appl Surf Sci 257, 8762–8766 (2011)10.1016/j.apsusc.2011.03.114 ↗
46. F. Ahmed, N. Arshi, M.S. Anwar, S.H. Lee, E.S. Byon, N.J. Lyu, B.H. Koo, Curr Appl Phys 12, S174–S177 (2012)10.1016/j.cap.2012.02.054 ↗
47. Z.J. Jin, Z.G. Lan, G.Y. Xue, W.X. Yan, C.W. Ju, Z.X. Song, H.Y. Lin, Two-photon absorption properties of Mn-doped ZnS quantum dots. Chin Phys Lett 23, 3097 (2006)10.1088/0256-307X/23/11/059 ↗