journal article·1977-01

Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors

H. Lefèvre, M. Schulz

Applied Physics· Volume 12· Issue 1
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Silicon Carbide Semiconductor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (14)

Show source-provided references
1. D.V.Lang: J. Appl. Phys.45, 3014, 3023 (1974)10.1063/1.1663718 ↗
2. D.V.Lang, L.C.Kimerling: Proc. Intern. Conf. Lattice Defects in Semiconductors (1974), Institute of Physics Conf. Ser. No. 23, London, pp. 581
3. T.Ikoma, B.Jeppson: Proc. Intern. Symp. Gallium Arsenide and Related Compounds (1972), Institute of Physics Conf. Ser. No. 17, London, pp. 75
4. Gary H.Glover: IEEE Trans. ED-19, 138 (1972)10.1109/T-ED.1972.17389 ↗
5. M.Schulz: Appl. Phys. Lett23, 31 (1973)10.1063/1.1654725 ↗
6. M.Beguwala, C.R.Crowell: Sol. St. Electron.17, 203 (1974)10.1016/0038-1101(74)90068-9 ↗
7. K.Nagasawa, M.Schulz: Appl. Phys.8, 35 (1975)10.1007/BF00883667 ↗
8. A.G.Milnes:Deep Impurities in Semiconductors (Wiley-Interscience, New York 1973)
9. M.Schulz: Proc. Europ. Summer School Scientific Principles of Semiconductor Technology (1974), European Physical Society, Bad Boll, pp. 191
10. W.Schockley, W.T.Read: Phys. Rev.87, 835 (1952)10.1103/PhysRev.87.835 ↗
11. G.L.Miller: IEEE Trans. ED-19, 1103 (1972)10.1109/T-ED.1972.17557 ↗
12. C.O.Thomas, D.Kalny, R.C.Manz: J. Electrochem. Soc.109, 1055 (1962)10.1149/1.2425235 ↗
13. J.Hilibrand, R.D.Gold: R.C.A. Rev.21, 245 (1960)
14. J.R.Yeargan, H.L.Taylor: J. Appl. Phys.39, 5600 (1968)10.1063/1.1656022 ↗