Synthesis and characterisation of co-evaporated tin sulphide thin films
Source abstract
Abstract
Tin sulphide films were grown at different substrate temperatures by a thermal co-evaporation technique. The crystallinity of the films was evaluated from X-ray diffraction studies. Single-phase SnS films showed a strong (040) orientation with an orthorhombic crystal structure and a grain size of 0.12 mu m. The films showed an electrical resistivity of 6.1 Omega cm with an activation energy of 0.26 eV. These films exhibited an optical band gap of 1.37 eV and had a high optical absorption coefficient (> 10(4) cm(-1)) above the band-gap energy. The results obtained were analysed to evaluate the potentiality of the co-evaporated SnS films as an absorber layer in solar photovoltaic devices.
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications
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References (23)
Show source-provided references
1. Tanusevski A, Poelman D (2003) Sol. Energy Mater. Sol. Cells 80:29710.1016/j.solmat.2003.06.002 ↗
2. Ferekides CS, Balasubramanian U, Mamazza R, Viswanathan V, Zhao H, Morel DL (2004) Sol. Energy 77:823
3. Noufi R, Souza P, Osterwald C (1985) Sol. Cells 15:8710.1016/0379-6787(85)90075-4 ↗
4. Engelken RD, McCloud HE, Lec C, Slayton M, Ghoreishi H (1987) J. Electrochem. Soc. 134:269610.1149/1.2100274 ↗
5. Ristov M, Sinadinovski G, Grozdanov I, Mitreski M (1989) Thin Solid Films 173:5310.1016/0040-6090(89)90536-1 ↗
6. Pereira MIS, Silva MFG, Da Costa FMA (1984) J. Electroanal. Chem. 172:36710.1016/0022-0728(84)80198-9 ↗
7. Ristov M, Sinadinovski G, Mitreski M, Ristova M (2000) Sol. Energy Mater. Sol. Cells 69:1710.1016/S0927-0248(00)00355-X ↗
8. Sato N, Ichimura M, Arai E, Yamazaki Y (2005) Sol. Energy Mater. Sol. Cells 85:15310.1016/j.solmat.2004.04.014 ↗
9. Shama AA, Zeyada HM (2003) Opt. Mater. 24:55510.1016/S0925-3467(03)00138-1 ↗
10. Takeuchi K, Ichimura M, Arai E, Yamazaki Y (2003) Sol. Energy Mater. Sol. Cells 75:42710.1016/S0927-0248(02)00192-7 ↗
11. Parenteau M, Carlone C (1990) Phys. Rev. B 41:522710.1103/PhysRevB.41.5227 ↗
12. Singh JP, Bedi RK (1991) Thin Solid Films 199:910.1016/0040-6090(91)90046-Z ↗
13. Ramakrishna Reddy KT, Koteeswara Reddy N, Miles RW (2004) in Proceedings of the 14th International Photovoltaic Science and Engineering Conference, Bangkok, Thailand, p 627
14. Noguchi H, Setiyadi A, Tanamura H, Nagatomo T, Omoto O (1994) Sol. Energy Mater. Sol. Cells 35:32510.1016/0927-0248(94)90158-9 ↗
15. Sharon M, Basavaswaran K (1988) Sol. Cells 25:9710.1016/0379-6787(88)90015-4 ↗
16. Noguchi H, Setiyadi A, Tanomura H, Nagatomo T, Omoto O (1994) Sol. Energy Mater. Sol. Cells 35:32510.1016/0927-0248(94)90158-9 ↗
17. Chopra KL (1969) Thin Film Phenomena. McGraw-Hill, New York, p 270
18. Warren BE (1969) X-ray Diffraction. Addison-Wesley, London, p 18
19. De CK, Mishra NK (1997) Ind. J. Phys. A 71:530
20. Kalita PKR, Sarma BK, Das HL (2000) Bull. Mater. Sci. 23:31310.1007/BF02720089 ↗
21. Masahiro T, Narumi I, Yoshizumi Y (1996) Vacuum 47:23910.1016/0042-207X(95)00208-1 ↗
22. Lopez S, Granados S, Ortiz A (1996) Semicond. Sci. Technol. 11:43310.1088/0268-1242/11/3/025 ↗
23. El-Nahass MM, Zeyada HM, Aziz MS, El-ghamaz NA (2002) Opt. Mater. 20:15910.1016/S0925-3467(02)00030-7 ↗