Large-scale ultraviolet electroluminescence from twin wollastonite in silicon-photonic device

In the past decades, ultraviolet (UV) spectroscopy has been enormously utilized in academic and industrial applications. In spite of that, lower optoelectrical performance compared to their visible light counterparts resulted in limitations for expanding the potential market. Understanding the current issue, we herein propose a highly efficient large-scale emission UV electroluminescent (EL) device that is prepared with a cost-effective process. The UV-EL device consists of a multi-dielectric layer that sandwiches the active layer in a silicon substrate. The UV light is generated from the f-d transitions of Ce3+ ions occupied in the wide bandgap polymorphic twinning wollastonite CaSiO3 host lattice in a process of so-called impact ionization. This work provides proof that the multi-dielectric layer in this structure plays an important role in preventing the leakage current and enhancing the light emission and expectantly will pave the future and more advanced development for efficient UV light realization in silicon photonics.