PECVD Processing of low bandgap-energy amorphous hydrogenated germanium-tin (a-GeSn:H) films for opto-electronic applications
Source abstract
Abstract
An alloy based on the group IV elements germanium and tin has the potential of yielding an earth-abundant low bandgap energy semiconductor material with applications in the fields of micro-electronics, optics, photonics and photovoltaics. In this work, the first steps towards the plasma enhanced chemical vapour deposition (PECVD) processing of a chemically stable, low bandgap energy and intrinsic GeSn:H alloy are presented. Using a tetramethyltin (TMT) precursor, over 70 PECVD processed films are presented. It was observed that the opto-electrical film properties are a result of the material phase fraction, void fraction, hydrogenation and the level of tin and carbon integration. In particular, managing the carbon integration from the TMT precursor into the material is crucial for obtaining low-bandgap and chemically stable materials. The collective findings from this work will aid in successfully identifying PECVD processing pathways for GeSn:H.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Photonic and Optical Devices · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (48)
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1. Mid-infrared photonics in silicon and germanium10.1038/nphoton.2010.171 ↗
2. Si-ge-sn alloys: from growth to applications10.1016/j.pcrysgrow.2015.11.001 ↗
3. Systematic study of gesn heterostructure-based light-emitting diodes towards mid-infrared applications10.1063/1.4958337 ↗
4. Direct gap ge1-ysnyalloys: fabrication and design of mid-IR photodiodes10.1063/1.4956439 ↗
5. Characterization of Sigesn for Use as a 1 Ev Sub-cell in Multi-junction Solar Cells
6. Si-ge-sn Alloys with 1.0 Ev Gap for CPV Multijunction Solar Cells
7. Enhanced sn incorporation in gesn epitaxial semiconductors via strain relaxation10.1063/1.5050273 ↗
8. The contributions of composition and strain to the phonon shift in alloys10.1016/j.ssc.2011.01.017 ↗
9. Epitaxial growth of strained and unstrained gesn alloys up to 25% sn10.1016/j.tsf.2013.10.064 ↗
10. Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial ge1-xsnx layer on ge(001) substrate10.1016/j.apsusc.2014.10.011 ↗
11. Properties of pseudomorphic and relaxed germanium1-xtinx alloys (x<0.185) grown by MBE10.1116/1.4975149 ↗
12. Fabrication of snxge1-x thin films with non-equilibrium composition10.1016/S0042-207X(96)00219-9 ↗
13. Growth of high-sn content (28%) gesn alloy films by sputtering epitaxy10.1016/j.jcrysgro.2018.04.008 ↗
14. Raman scattering study of amorphous gesn films and their crystallization on si substrates10.1016/j.jnoncrysol.2016.07.007 ↗
15. Fundamentals of ge1-xsnx and siyge1-x-ysnx RPCVD epitaxy10.1016/j.mssp.2016.12.024 ↗
16. Impact of thickness on the structural properties of high tin content gesn layers10.1016/j.jcrysgro.2017.05.006 ↗
17. Direct bandgap group IV epitaxy on si for laser applications10.1021/acs.chemmater.5b01327 ↗
18. Sn-alloying as a means of increasing the optical absorption of ge at the c- and l-telecommunication bands10.1088/0268-1242/24/11/115006 ↗
19. Ge-sn semiconductors for band-gap and lattice engineering10.1063/1.1515133 ↗
20. Structural and optical properties of amorphous gexsn1-x alloys10.1016/0038-1098(72)90525-X ↗
21. Use of hydrogenation in the study of the properties of amorphous germanium tin alloys10.1063/1.342950 ↗
22. Structure and composition of amorphous ge1-xsnx thin films10.1063/1.340338 ↗
23. Pseudogap of energy in amorphous ge-sn films10.1143/JPSJ.33.1497 ↗
24. The impact of processing conditions and post-deposition oxidation on the opto-electrical properties of hydrogenated amorphous and nano-crystalline germanium films10.1016/j.jnoncrysol.2020.120507 ↗
25. Improved PECVD processed hydrogenated germanium films through temperature induced densification10.1016/j.mssp.2021.106285 ↗
26. Opto-electrical properties of group IV alloys : the inherent challenges of processing hydrogenated germanium10.1002/advs.202200814 ↗
27. Anisotropic biaxial stress evaluation in metal-organic chemical vapor deposition grown ge1-xsnx mesa structure by oil-immersion raman spectroscopy10.1016/j.tsf.2020.137797 ↗
28. Role of h2 supply for sn incorporations in MOCVD ge1-xsnx epitaxial growth10.1016/j.jcrysgro.2016.12.085 ↗
29. Influence of process parameters on structure and optical properties of gec thin films deposited by RF magnetron sputtering10.1016/j.tsf.2011.01.204 ↗
30. Influence of deposition conditions on the properties of a-gec:h and a-ge:h films prepared by r.f. magnetron sputtering10.1016/0040-6090(95)06671-3 ↗
31. Fityk : a general-purpose peak fitting program10.1107/S0021889810030499 ↗
32. Spectroscopic review of hydrogenated, carbonated and oxygenated group IV alloys10.1016/j.vibspec.2022.103387 ↗
33. Relation of the si-h stretching frequency to the nanostructural si-h bulk environment10.1103/PhysRevB.76.073202 ↗
34. Vibrational spectra of hydrogen in silicon and germanium10.1002/pssb.2221180202 ↗
35. Hydrogen bonding in hydrogenated amorphous germanium
36. Si-rich a-sic:h thin films: structural and optical transformations during thermal annealing10.1016/j.tsf.2010.07.085 ↗
37. Post thermal annealing crystallization and reactive ion etching of sic films produced by PECVD10.1016/j.jnoncrysol.2006.01.075 ↗
38. Infrared vibrational spectra of hydrogenated amorphous silicon carbide thin films prepared by glow discharge10.1016/0165-1633(87)90075-X ↗
39. Glow discharge a-si1-xcx: h films studied by ESR and IR measurements10.1143/JJAP.21.L119 ↗
40. Infrared analysis of artificial (photo)synthesis in hydrogenated germanium10.1039/D2CP01054B ↗
41. Physical and electronic structure of amorphous silicon carbon hydrogen alloy10.1063/1.100896 ↗
42. Influence of CH4 flow rate on properties of HF-PECVD a-sic films and solar cell application10.1016/j.cap.2010.11.009 ↗
43. Light-soaking in a-sic:h films grown by PECVD in undiluted and hydrogen diluted sih4 + CH4gas mixtures10.1016/0022-3093(95)00754-7 ↗
44. Systematic study of ge1-xsnx absorption coefficient and refractive index for the device applications of si-based optoelectronics10.1063/1.4943652 ↗
45. TETRAMETHYLTIN, 99% | gelest, inc.
46. Active thermochemical tables: sequential bond dissociation enthalpies of methane, ethane, and methanol and the related thermochemistry10.1021/acs.jpca.5b01346 ↗
47. Handbook of bond dissociation energies in organic compounds
48. Fourier transform-ion cyclotron resonance study of the gas-phase acidities of germane and methylgermane; bond dissociation energy of germane10.1016/1044-0305(93)85042-V ↗