Halide chemical vapor deposition of 2D semiconducting atomically-thin crystals: From self-seeded to epitaxial growth

Atomically-thin crystals remain an epicenter of today`s ongoing efforts of materials exploration for both fundamental knowledge and technological applications. We show that key modifications in the nucleation and growth steps lead to a controlled self-seeded growth of the monolayer transition metal dichalcogenide (TMDC) crystals and their lateral heterostructures via an halide chemical vapor deposition (HCVD) process which is a proven industrial scale and carbon-free synthesis technique for various material types. We present a general growth model with the limiting conditions on the nucleation density and crystal size of the 2D TMDCs grown in HCVD process. Furthermore, upon reduction of the self-seeded growth by a suitable surface pre-treatment, and by the modification of the nucleation step, epitaxial growth of monolayer TMDCs is also demonstrated using HCVD approach. The steady-state and time-resolved photoluminescence spectroscopic studies revealed the high optical and electronic quality of the as-grown 2D TMDCs semiconducting crystals. Field-effect transistor device characteristics of HCVD grown monolayer MoS2 using SiO2 gate dielectric shows an average mobility of 26 ± 7 cm2.V−1.s−1 and on-off ratio of ∼107, promising for large-scale device applications.