Visible-blind wide-dynamic-range fast-response self-powered ultraviolet photodetector based on CuI/In-Ga-Zn-O heterojunction
Source abstract
Abstract
Abstract Transparent p–n diodes based on heterojunctions of p-type CuI polycrystalline layers and n-type amorphous In-Ga-Zn-O (a-IGZO) layers can be fabricated at room temperature. CuI effectively absorbs UV light owing to the simultaneous occurrence of band-to-band and excitonic transitions at room temperature. As a result, the CuI/a-IGZO heterojunction diodes exhibit clear photovoltaic effect under weak UV irradiation, even though the CuI layers are as thin as ∼30 nm. The photocurrent at zero bias quickly tracks the on/off signals of the UV irradiation, and thus the CuI/a-IGZO heterojunctions serve as a UV photodetector (UVPD) operating in self-powered mode. The CuI/a-IGZO-based UVPD features a wide dynamic range and excellent linearity of the responsivity against UV radiation intensity. Therefore, the CuI/a-IGZO heterojunction is a promising candidate to produce a self-powered rapid-response wide-dynamic-range UVPD that exhibits excellent linearity.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (79)
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