journal article·2016-03

The two-electron exchange between the U – tin centers in crystal and glass-like chalcogenide semiconductors

A. V. Marchenko, A. V. Nikolaeva, P. P. Seregin, A. V. Shaldenkova, K. U. Bobokhuzhaev

Glass Physics and Chemistry· Volume 42· Issue 2
Publisher page

Abstract

The two-electron exchange between neutral and doubly ionized U – tin centers in the partially compensated Pb0.96Sn0.02Na0.01Tl0.01S hole solid solutions in the temperature range of 80–900 K and in the partially compensated Pb0.965Sn0.015Na0.01Tl0.01Se hole solid solutions in the temperature range of 80–600 K was studied by 119mm Sn(119m Sn) Mössbauer spectroscopy. The activation energy of this process for the Pb0.96Sn0.02Na0.01Tl0.01S solid solutions is comparable with the depth of the tin energy levels in the PbS band gap and amounts to 0.11(2) eV, while in the Pb0.965Sn0.015Na0.01Tl0.01Se solid solutions it is comparable with the correlation energy of the donor U – tin centers in PbSe and amounts to 0.05(1) eV. It is established that the exchange is implemented by the simultaneous transfer of two electrons with the valence band states involved. In the glass-like (As2Se3)0.3(GeSe)0.6(SnSe)0.1 alloy containing quadruply charged six-coordinated tin (singly ionized donor center) and doubly charged three-coordinated tin (singly ionized acceptor center), no traces of the electronic exchange between differently charged tin states was observed up to a temperature of 480 K, which is explained by the fact that the doubly charged and quadruply charged tin centers are in different coordination states.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (8)

Show source-provided references
1. Elektronnye yavleniya v khal’kogenidnykh stekloobraznykh poluprovodnikakh (Electronic Effects in Chalcogenide Glassy Semiconductors), Tsendin, L.D., Ed., St. Petersburg: Nauka, 1996.
2. Bordovsky, G., Marchenko, A., and Seregin, P., Mössbauer of Negative U Centers in Semiconductors and Superconductors. Identification, Properties, and Applicaton, Academic, 2012.
3. Bordovskii, G.A., Marchenko, A.V., Anisimova, N.I., Zaitseva, A.V., and Seregin, P.P., Two-electron tin centers with a negative correlation energy in lead sulfide, Glass Phys. Chem., 2013, vol. 39, no. 2, pp. 201–207.10.1134/S1087659613020053 ↗
4. Bordovskii, G.A., Kastro, R.A., Seregin, P.P., and Dobrodub, A.A., Properties and structure of (As2Se3)1–z (SnSe) z–x (GeSe)x and (As2Se3)1–z (SnSe2) z–x (GeSe2)x glasses, Glass Phys. Chem., 2006, vol. 32, no. 3, pp. 320–324.10.1134/S1087659606030114 ↗
5. Bordovskii, G.A., Kastro, P.A., Marchenko, A.V., and Seregin, P.P., Structure and physicochemical properties of the (AsSI)1–x (As2S3)x and (AsSeI)1–x (As2Se3)x glasses, Glass Phys. Chem., 2007, vol. 33, no. 5, pp. 464–466.10.1134/S1087659607050057 ↗
6. Bordovskii, G.A. and Marchenko, A.V., Identifikatsiya U-tsentrov v kristallicheskikh i stekloobraznykh poluprovodnikakh i polumetallakh metodom messbauerovskoi spektroskopii (Identification of U-Centers in Crystalline and Glassy Semiconductors and Semimetals by Mössbauer Spectroscopy), St. Petersburg: Nauka, 2010.
7. Kastro Arata, Primesnye i defektnye U-tsentry kak instrument issledovaniya khal’kogenidnykh stekloobraznykh poluprovodnikov (Impurity and Defect UCenters as a Tool for Research Chalcogenide Glassy Semiconductors), St. Petersburg: Ross. Gos. Pedagog. Univ. im. Gertsena, 2011.
8. Vasil’ev, L.N., Makeeva, K.V., Kryl’nikov, Yu.V., and Seregin, L.N., Study of oxidation and thermal decomposition of tin chalcogenides by Mössbauer spectroscopy, Neorg. Mater., 1977, vol. 13, no. 10, pp. 1752–1756.