journal article·2026-05-01Open access

Intrinsic low-spin state and strain-tunable anomalous Hall scaling in high-quality SrRuO3 (111) films

Harunori Shiratani, Yuki K. Wakabayashi, Yoshiharu Krockenberger, Masaki Kobayashi, Kohei Yamagami, Takahito Takeda, Shinobu Ohya, Masaaki Tanaka, Yoshitaka Taniyasu

APL Materials· Volume 14· Issue 5

Abstract

The (111)-oriented 4d ferromagnetic perovskite SrRuO3 (SRO) offers a unique triangular-lattice geometry, making it a promising platform for exploring Berry-curvature-driven and spin–orbit-coupled transport. Here, we present a systematic study of the structure, magnetism, and magnetotransport of high-quality SRO (111) thin films with thicknesses t = 1.2–60 nm grown on SrTiO3 (111) substrates by machine-learning-assisted molecular beam epitaxy. We achieved a residual resistivity ratio of 45.5 in a 60 nm-thick film, the highest reported for this orientation, enabling access to intrinsic electronic and magnetic behavior. Temperature-dependent resistivity confirms Fermi-liquid transport below ∼15 K in both coherently strained (t = 10, 20 nm) and strain-relaxed (t = 60 nm) films, thereby enabling detailed magnetotransport and magnetic measurements. The linear, non-saturating positive magnetoresistance persists up to 14 T, while Hall-effect measurements and temperature scaling separate intrinsic (Karplus–Luttinger) and extrinsic (side-jump) contributions to the anomalous Hall effect, with the relative weight tuned by (111) epitaxial strain. X-ray magnetic circular dichroism at the Ru M2,3 and O K edges, together with SQUID magnetometry, demonstrates an intrinsically low-spin Ru ground state for both coherently strained and relaxed films, resolving ambiguities among prior reports. These detailed crystalline, electrical, and magnetic characterizations provide a rigorous foundation for understanding and engineering quantum transport in SRO (111).
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Research context

OpenAlex topics: Advanced Condensed Matter Physics · Electronic and Structural Properties of Oxides · Topological Materials and Phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Basic Research Laboratories, NTT, Inc. 1 , Atsugi, Kanagawa 243-0198,

Department of Electrical Engineering and Information Systems, The University of Tokyo 2 , 7-3-1 Hongo, Bunkyo, Tokyo 113-8656,

Japan Synchrotron Radiation Research Institute (JASRI) 3 , 1-1-1 Kouto, Sayo, Hyogo 679-5198,

Department of Chemical System Engineering, The University of Tokyo 4 , 7-3-1 Hongo, Bunkyo, Tokyo 113-8656,

Center for Spintronics Research Network, The University of Tokyo 5 , 7-3-1 Hongo, Bunkyo, Tokyo 113-8656,

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