journal article·2024-03-01Open access

Area-selective deposition of germanium on patterned graphene/monolayer molybdenum disulfide stacks via dipole engineering

Yeonjoo Lee, Towfiq Ahmed, Xuejing Wang, Michael T. Pettes, Yeonhoo Kim, Jeongwon Park, Woo Seok Yang, Kibum Kang, Young Joon Hong, Soyeong Kwon, Jinkyoung Yoo

APL Materials· Volume 12· Issue 3

Abstract

Heterogeneous integration of two-dimensional materials and the conventional semiconductor has opened opportunities for next-generation semiconductor devices and their processing. Heterogeneous integration has been studied for economical manufacturing by substrate recycling and novel functionalities by a combination of incommensurate materials. However, utilizing the integration requires controlling locations of the integrated architectures. Here, we show area-selective deposition (ASD) of germanium on the graphene/MoS2 stack. Ge nucleation precisely occurred on the surfaces of the patterned graphene/MoS2 stack via dipole engineering. In this study, the growth temperature of ASD of Ge was significantly lower than that based on precursor desorption on SiO2. The first-principles calculations revealed that Ge deposited by ASD on the graphene/MoS2 stack was not affected by charge transfer. This work provides a viable way to utilize atomically thin materials for next-generation semiconductor devices, which can be applicable for “Beyond Moore” and “More Moore” approaches.
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Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Integrated Nanotechnologies, Los Alamos National Laboratory 1 , Los Alamos, New Mexico 87545, USA

National Security Directorate, 2 , Richland, Washington 99354, USA

Pacific Northwest National Laboratory 2 , Richland, Washington 99354, USA

Interdisciplinary Materials Measurement Institute, 3 , Daejeon 34133, Republic of Korea

Korea Research Institute of Standards and Science 3 , Daejeon 34133, Republic of Korea

Department of Materials Science and Engineering, 4 , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

Korea Advanced Institute of Science and Technology (KAIST) 4 , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

Electronic Material and Device Research Center, 5 , Seongnam, Gyeonggi-do 13509, Republic of Korea

Korea Electronics Technology Institute 5 , Seongnam, Gyeonggi-do 13509, Republic of Korea

Department of Nanotechnology and Advanced Materials Engineering, 6 , Seoul 05006, Republic of Korea

Sejong University 6 , Seoul 05006, Republic of Korea

Department of Mechanical and Aerospace Engineering, 7 , Irvine, California 92697, USA

University of California Irvine 7 , Irvine, California 92697, USA

Funding

Los Alamos National Laboratory · Basic Energy Sciences

References (37)

Show source-provided references
1. Nat. Commun. · 2022 · 13 · 139210.1038/s41467-022-29001-4 ↗
2. Nature · 2019 · 573 · 50710.1038/s41586-019-1573-9 ↗
3. Mater. Lett. · 2018 · 211 · 13310.1016/j.matlet.2017.09.112 ↗
4. Small · 2018 · 14 · 170441410.1002/smll.201704414 ↗
5. APL Photonics · 2022 · 7 · 05090110.1063/5.0078608 ↗
6. Nature · 2017 · 544 · 34010.1038/nature22053 ↗
7. Appl. Phys. Lett. · 2018 · 113 · 23310310.1063/1.5064542 ↗
8. APL Mater. · 2021 · 9 · 05111510.1063/5.0045639 ↗
9. ACS Nano · 2022 · 16 · 239910.1021/acsnano.1c08779 ↗
10. Nature · 2020 · 578 · 7510.1038/s41586-020-1939-z ↗
11. Sci. Adv. · 2020 · 6 · eaaz518010.1126/sciadv.aaz5180 ↗
12. Adv. Mater. Interfaces · 2019 · 6 · 190020710.1002/admi.201970102 ↗
13. Nanoscale · 2018 · 10 · 568910.1039/c7nr06684h ↗
14. Nature · 1962 · 195 · 48510.1038/195485a0 ↗
15. J. Cryst. Growth · 1971 · 8 · 3310.1016/0022-0248(71)90019-4 ↗
16. J. Electrochem. Soc. · 1994 · 141 · 59310.1149/1.2054774 ↗
17. J. Electrochem. Soc. · 2000 · 147 · 184710.1149/1.1393445 ↗
18. J. Electrochem. Soc. · 2000 · 147 · 185410.1149/1.1393446 ↗
19. IEEE Electron Device Lett. · 2012 · 33 · 57910.1109/led.2011.2181814 ↗
20. Microelectron. Eng. · 2016 · 163 · 4910.1016/j.mee.2016.06.002 ↗
21. Jpn. J. Appl. Phys. · 2019 · 58 · SBBA0410.7567/1347-4065/ab027b ↗
22. Chem. Mater. · 2018 · 30 · 760310.1021/acs.chemmater.8b02774 ↗
23. Thin Solid Films · 2008 · 517 · 10110.1016/j.tsf.2008.08.031 ↗
24. Solid-State Electron. · 2016 · 124 · 1010.1016/j.sse.2016.07.024 ↗
25. 2016 · 216
26. J. Lightwave Technol. · 2017 · 35 · 530610.1109/jlt.2017.2766266 ↗
27. Nanoscale · 2016 · 8 · 1867510.1039/c6nr03621j ↗
28. J. Vac. Sci. Technol., B · 2012 · 30 · 03060210.1116/1.3701711 ↗
29. Nanoscale · 2014 · 6 · 750310.1039/c3nr06771h ↗
30. Mater. Today · 2017 · 20 · 61110.1016/j.mattod.2017.04.027 ↗
31. Nanoscale · 2014 · 6 · 107110.1039/c3nr03692h ↗
32. New J. Phys. · 2011 · 13 · 02500810.1088/1367-2630/13/2/025008 ↗
33. IOP Conf. Ser.: Mater. Sci. Eng. · 2017 · 182 · 01203010.1088/1757-899x/182/1/012030 ↗
34. ACS Appl. Mater. Interfaces · 2016 · 8 · 1911910.1021/acsami.6b04719 ↗
35. ACS Appl. Electron. Mater. · 2019 · 1 · 40710.1021/acsaelm.8b00128 ↗
36. J. Phys. Chem. Lett. · 2022 · 13 · 512310.1021/acs.jpclett.2c01197 ↗
37. Nano Lett. · 2014 · 14 · 612110.1021/nl502085z ↗