Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers

A ferroelectric HfxZr1−xO2 (HZO) thin film crystallized with nanocrystalline top- and bottom-ZrO2 nucleation layers (D-ZrO2) exhibited superior remanent polarization (2Pr = Pr+ − Pr− = 29 μC/cm2) compared to that of similar thin films (12 μC/cm2) crystallized without a ZrO2 nucleation layer (w/o) when the HZO film thickness was 10 nm. Epitaxial-like grain growth of the HZO film was observed on the surfaces of both the top- and bottom-ZrO2 layers, while there was almost no significant difference in the crystal grain size of the HZO film in all samples, as determined by cross-sectional transmission electron microscopy images. Consequently, the ferroelectric orthorhombic, tetragonal, and cubic (O/T/C) phase ratio of the HZO film was significantly increased by using the ZrO2 nucleation layers. It was furthermore confirmed that the 2Pr values were strongly correlated with the O/T/C phase ratio of the HZO film. Therefore, it is clear that the top- and bottom-ZrO2 nucleation layers play an important role in the formation of the ferroelectric HZO film. These results suggest that the HZO film fabrication technique using a nanocrystalline ZrO2 nucleation layer is a promising candidate for next-generation device applications.