Growth of bilayer transition metal dichalcogenides at controlled locations
Source abstract
Abstract
Layered transition metal dichalcogenide (TMD) materials have attracted great interest for applications in electronics. Here, we report a method to synthesize TMD materials at controlled locations with the desired layer number. Metal oxide precursors are patterned on the growth substrate by photolithography, and then a mixture of sodium chloride and sodium cholate growth promoters is applied to enable the growth of monolayer and bilayer TMDs with large flake sizes. The quality of the bilayer flakes is examined by atomic force microscopy, Auger electron spectroscopy, Raman spectroscopy, photoluminescence spectroscopy, and transmission electron microscopy. Electrical performance is evaluated by fabricating three-terminal field-effect transistors that demonstrate high carrier mobilities and on/off ratios larger than 105. This approach provides insights into future device applications and integration strategies based on layered TMD materials.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Nanoplatforms for cancer theranostics · Luminescence and Fluorescent Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Systems Engineering, University of Pennsylvania 1 , Philadelphia, Pennsylvania 19104, USA
Intel Corporation 2 , 2501 Nebraska Century Blvd., Hillsboro, Oregon 97124, USA
Department of Physics and Astronomy and Department of Electrical and Systems Engineering, University of Pennsylvania 3 , Philadelphia, Pennsylvania 19104, USA
Funding
Intel Corporation
References (43)
Show source-provided references
1. Large area few-layer TMD film growths and their applications10.1088/2515-7639/ab82b3 ↗
2. Recent development of two-dimensional transition metal dichalcogenides and their applications10.1016/j.mattod.2016.10.002 ↗
3. Electronics based on two-dimensional materials10.1038/nnano.2014.207 ↗
4. Mono- and bilayer WS2 light-emitting transistors10.1021/nl500171v ↗
5. Recent advances in the properties and synthesis of bilayer graphene and transition metal dichalcogenides10.1088/2515-7639/abb58d ↗
6. Emerging photoluminescence in monolayer MoS210.1021/nl903868w ↗
7. Disassembling 2D van der Waals crystals into macroscopic monolayers and reassembling into artificial lattices10.1126/science.aba1416 ↗
8. Wafer-scale growth of MoS2 thin films by atomic layer deposition10.1039/c6nr01346e ↗
9. Monolayer single-crystal 1T′-MoTe2 grown by chemical vapor deposition exhibits weak antilocalization effect10.1021/acs.nanolett.6b01342 ↗
10. Scalable production of molybdenum disulfide based biosensors10.1021/acsnano.6b02137 ↗
11. A library of atomically thin metal chalcogenides10.1038/s41586-018-0008-3 ↗
12. Molecular beam epitaxy of highly crystalline monolayer molybdenum disulfide on hexagonal boron nitride10.1021/jacs.7b05131 ↗
13. Growth of monolayer and bilayer MoS2 through the solution precursor for high-performance photodetectors10.1016/j.cap.2020.02.012 ↗
14. Controlled growth of large-area bilayer tungsten diselenides with lateral P-N junctions10.1021/acsnano.9b04453 ↗
15. Rapid growth of monolayer MoSe2 films for large-area electronics10.1002/aelm.202001219 ↗
16. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire10.1038/s41565-021-00963-8 ↗
17. Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire10.1038/s41565-021-01004-0 ↗
18. General synthesis of two-dimensional van der Waals heterostructure arrays10.1038/s41586-020-2098-y ↗
19. Self-expanding molten salt-driven growth of patterned transition-metal dichalcogenide crystals10.1021/jacs.2c02518 ↗
20. Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations10.1038/ncomms7128 ↗
21. Role of the seeding promoter in MoS2 growth by chemical vapor deposition10.1021/nl4033704 ↗
22. Recent developments in controlled vapor-phase growth of 2D group 6 transition metal dichalcogenides10.1002/adma.201804939 ↗
23. Ultrafast nucleation and growth of high-quality monolayer MoSe2 crystals via vapor-liquid-solid mechanism10.1088/1361-6528/ab8fe2 ↗
24. Toward a mechanistic understanding of vertical growth of van der Waals stacked 2D materials: a multiscale model and experiments10.1021/acsnano.7b07604 ↗
25. Halide-assisted atmospheric pressure growth of large WSe2 and WS2 monolayer crystals10.1016/j.apmt.2015.09.001 ↗
26. Tuning structural properties of WO3 thin films for photoelectrocatalytic water oxidation10.3390/catal11030381 ↗
27. Role of microwave on structural, morphological, optical and visible light photocatalytic performance of WO3 nanostructures10.1007/s10876-019-01512-z ↗
28. An XPS study of the UV reduction and photochromism of MoO3 and WO310.1063/1.443047 ↗
29. SEM, XPS, and FTIR studies of MoO3 dispersion on mesoporous silicate MCM-41 by calcination10.1016/s0167-577x(03)00369-0 ↗
30. Gap states assisted MoO3 nanobelt photodetector with wide spectrum response10.1038/srep04891 ↗
31. Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides10.1038/srep01608 ↗
32. Extraordinary room-temperature photoluminescence in triangular WS2 monolayers10.1021/nl3026357 ↗
33. Phonons in single-layer and few-layer MoS2 and WS210.1103/physrevb.84.155413 ↗
34. Layer number dependent optical and electrical properties of CVD grown two-dimensional anisotropic WS210.1016/j.surfin.2021.101308 ↗
35. Edge defect-assisted synthesis of chemical vapor deposited bilayer molybdenum disulfide10.1016/j.ceramint.2021.07.188 ↗
36. High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films10.1038/srep10699 ↗
37. Highly stable and tunable chemical doping of multilayer WS2 field effect transistor: Reduction in contact resistance10.1021/acsami.5b06825 ↗
38. Ultrahigh-gain and fast photodetectors built on atomically thin bilayer tungsten disulfide grown by chemical vapor deposition10.1021/acsami.7b14853 ↗
39. Area-selective growth of two-dimensional mono- and bilayer WS2 for field effect transistors10.1021/acsmaterialslett.3c00094 ↗
40. Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors10.1063/5.0119375 ↗
41. Layer-dependent electronic structure changes in transition metal dichalcogenides: The microscopic origin10.1021/acsomega.0c01138 ↗
42. Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe210.1364/oe.21.004908 ↗
43. Electrostatically enhanced electron–phonon interaction in monolayer 2H-MoSe2 grown by molecular beam epitaxy10.1021/acsami.0c12748 ↗