Reliably straining suspended van der Waals heterostructures
Source abstract
Abstract
2D materials provide a rapidly expanding platform for the observation of novel physical phenomena and for the realization of cutting-edge optoelectronic devices. In addition to their peculiar individual characteristics, 2D materials can be stacked into complex van der Waals heterostructures, greatly expanding their potential. Moreover, thanks to their excellent stretchability, strain can be used as a powerful control knob to tune or boost many of their properties. Here, we present a novel method to reliably and repeatedly apply a high uniaxial tensile strain to suspended van der Waals heterostructures. The reported device is engineered starting from a silicon-on-insulator substrate, allowing for the realization of suspended silicon beams that can amplify the applied strain. The strain module functionality is demonstrated using single- and double-layer graphene layers stacked with a multilayered hexagonal boron nitride flake. The heterostructures can be uniaxially strained, respectively, up to ∼1.2% and ∼1.8%.
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Research context
OpenAlex topics: Graphene research and applications · 2D Materials and Applications · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Solid State Electronics, Technische Universität Wien 1 , Gußhausstraße 25-25a, 1040 Wien, Austria
Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona 2 , 08193 Bellaterra, Barcelona, Spain
Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB 3 , 08193 Bellaterra, Spain
Funding
Austrian Science Fund · Ministerio de Ciencia e Innovación · Fundación Carmen y Severo Ochoa · Generalitat de Catalunya · Ministerio de Ciencia, Innovación y Universidades
References (44)
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