DataVXAPL MaterialsPaper
journal article·2023-11-01Open access

Observations of very fast electron traps at SiC/high-κ dielectric interfaces

Arnar M. Vidarsson, Axel R. Persson, Jr-Tai Chen, Daniel Haasmann, Jawad Ul Hassan, Sima Dimitrijev, Niklas Rorsman, Vanya Darakchieva, Einar Ö. Sveinbjörnsson

APL Materials· Volume 11· Issue 11
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Source abstract

Abstract

Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal–oxide–semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the SiO2 dielectric with energy levels close to the SiC conduction band edge and the observed conductance spectroscopy signal is a result of electron tunneling to and from these defects. Using aluminum nitride and aluminum oxide as gate dielectrics instead of SiO2, we detect NI traps at these SiC/dielectric interfaces as well. A detailed investigation of the NI trap density and behavior as a function of temperature is presented and discussed. Advanced scanning transmission electron microscopy in combination with electron energy loss spectroscopy reveals no SiO2 at the interfaces. This strongly suggests that the NI traps are related to the surface region of the SiC rather than being a property of the gate dielectric.
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Research context

Electronic materials

OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Science Institute, University of Iceland 1 , IS-107 Reykjavik, Iceland

Department of Physics, Chemistry and Biology (IFM), Competence Centre for III-Nitride Technology C3NiT-Janzén, Linköping University 2 , SE-581 83 Linköping, Sweden

Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linköping University 3 , SE-581 83 Linköping, Sweden

SweGaN 4 , Olaus Magnusväg 48A, SE-58330 Linköping, Sweden

Queensland Micro- and Nanotechnology Centre, Griffith University 5 , Brisbane, QLD 4111, Australia

School of Engineering and Built Environment, Griffith University 6 , Brisbane, QLD 4111, Australia

Department of Physics, Chemistry and Biology (IFM), Linköping University 7 , SE-581 83 Linköping, Sweden

Department of Microtechnology and Nanoscience, Chalmers University of Technology 8 , SE-41296 Göteborg, Sweden

Department of Physics, Solid State Physics and NanoLund, Competence Centre for III-Nitride Technology C3NiT-Janzén, Lund University 9 , P.O. Box 118, 221 00 Lund, Sweden

Funding

Icelandic Center of Research · University of Iceland Research Fund · VINNOVA · Swedish Foundation for Strategic Research

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Show source-provided references
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