journal article·2023-11-01Open access

Theoretical study on the origin of anomalous temperature-dependent electric resistivity of ferromagnetic semiconductor

Hikari Shinya, Tetsuya Fukushima, Kazunori Sato, Shinobu Ohya, Hiroshi Katayama-Yoshida

APL Materials· Volume 11· Issue 11

Abstract

Employing Korringa–Kohn–Rostoker Green’s function methodology, our investigation elucidates the previously obscure origins of the anomalous temperature-dependent electrical resistivity behavior of (Ga,Mn)As ferromagnetic semiconductors. Phonon and magnon excitations induced by temperature effects are addressed via the coherent potential approximation, while the Kubo–Greenwood formula is employed to compute transport properties. Consequently, the anomalous temperature-dependent electrical resistivity arising from the ferromagnetic–paramagnetic transition is successfully replicated. Our examination of electronic structures and magnetic interactions reveals pivotal roles played by antisite defects and interstitial Mn atoms in governing this behavior. As this approach enables both the estimation of temperature-dependent transport properties and the assessment of underlying mechanisms from a microscopic standpoint, it holds significant potential as a versatile tool across diverse fields.
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Research context

OpenAlex topics: ZnO doping and properties · Quantum and electron transport phenomena · Magnetic properties of thin films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Spintronics Research Network (CSRN), The University of Tokyo 1 , 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Department of Electrical Engineering and Information Systems, The University of Tokyo 2 , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Institute for Chemical Research, Kyoto University 3 , Gokasho, Uji, Kyoto 611-0011, Japan

Center for Science and Innovation in Spintronics (CSIS), Tohoku University 4 , 2-1-1, Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan

Center for Spintronics Research Network (CSRN), Osaka University 5 , 1-3, Machikaneyama, Toyonaka, Osaka 560-8531, Japan

National Institute of Advanced Industrial Science and Technology (AIST) 6 , 1-1-1 Umezono, Tsukuba, Ibaraki 305-8560, Japan

Graduate School of Engineering, Osaka University 7 , 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo 8 , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

Funding

Core Research for Evolutional Science and Technology · Japan Society for the Promotion of Science · Ministry of Education, Culture, Sports, Science and Technology

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