Nanoscale domain engineering in SrRuO3 thin films
Source abstract
Abstract
We investigate nanoscale domain engineering via epitaxial coupling in a set of SrRuO3/PbTiO3/SrRuO3 heterostructures epitaxially grown on (110)o-oriented DyScO3 substrates. The SrRuO3 layer thickness is kept at 55 unit cells, whereas the PbTiO3 layer is grown to thicknesses of 23, 45, and 90 unit cells. Through a combination of atomic force microscopy, x-ray diffraction, and high resolution scanning transmission electron microscopy studies, we find that above a certain critical thickness of the ferroelectric layer, the large structural distortions associated with the ferroelastic domains propagate through the top SrRuO3 layer, locally modifying the orientation of the orthorhombic SrRuO3 and creating a modulated structure that extends beyond the ferroelectric layer boundaries.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Multiferroics and related materials · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Quantum Matter Physics, University of Geneva 1 , 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland
Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides 2 , Orsay 91405, France
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