Thermal oxidation of AIIIBV semiconductors with V2O5 nanolayers on the surface
Source abstract
Abstract
The specific features of the interaction of vanadium(V) oxide nanofilms with the surface of gallium arsenide and indium phosphide semiconductors under thermal oxidation conditions have been considered. The kinetics and mechanism of thermal oxidation of GaAs and InP with deposited V2O5 layers 15 and 25 nm in thickness have been studied. It has been revealed that vanadium(V) oxide exerts a specific effect on the oxidation of gallium arsenide and indium phosphide as compared to other d-metal oxides. It has been established that the oxidation occurs with the formation of a phase predominantly consisting of indium phosphates or gallium arsenates and intermediate products based on vanadium compounds in different oxidation states. Schemes have been proposed for the development of the oxidation processes with due regard for the chemical nature of vanadium(V) oxide.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor Quantum Structures and Devices · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (9)
Show source-provided references
1. Mittova, I.Ya. and Pshestanchik, V.R., Catalytic Effect of Vanadium(V) Oxide on the Thermal Oxidation of GaAs and InP, Dokl. Akad. Nauk SSSR, 1991, vol. 318, no. 1, pp. 139–143.
2. Krishna, M.G., Debauge, Y., and Bhattacharya, A.K., X-Ray Photoelectron Spectroscopy and Spectral Transmittance Study of Stoichiometry in Sputtered Vanadium Oxide Films, Thin Solid Films, 1998, vol. 312, pp. 116–122.10.1016/S0040-6090(97)00717-7 ↗
3. Tomina, E.V., Mittova, I.Ya., Sukhochev, A.S., and Sladkopevtsev, B.V., Thermal Oxidation of Gallium Arsenide with the Surface Modified by Transition Metal Oxides, Fiz. Khim. Stekla, 2010, vol. 36, no. 2, pp. 297–306 [Glass Phys. Chem. (Engl. transl.), 2010, vol. 36, no. 2, pp. 238–246].
4. Sukhochev, A.S., Tomina, E.V., and Mittova, I.Ya., Thermal Oxidation of Gallium Arsenide with Transition Metal Nanolayers on the Surface, Fiz. Khim. Stekla, 2008, vol. 34, no. 6, pp. 953–974 [Glass Phys. Chem. (Engl. transl.), 2008, vol. 34, no. 6, pp. 724–741].
5. Tret’yakov, Yu.D. and Putlyaev, V.I., Vvedenie v khimiyu tverdofaznykh materialov: Uchebnoe posobie (Introduction to the Chemistry of Solid-Phase Materials: A Text-book), Moscow: Nauka, 2006 [in Russian].
6. Barret, P., Cinetique heterogene, Paris: Gauthier Villars, 1973 [in French]. Translated under the title Kinetika geterogennykh protsessov, Moscow: Mir, 1976.
7. Yamaguchi, M. and Ando, K., Thermal Oxidation of InP and Properties of Oxide Films, J. Appl. Phys., 1980, vol. 51, no. 9, pp. 5007–5012.10.1063/1.328380 ↗
8. Mittova, I.Ya., Prokin, A.K., Gavryutin, V.K, et al., High-Temperature Thermal Oxidation of the Co/InP and Co3O4/InP Structures, Izv. Akad. Nauk SSSR, Neorg. Mater., 1976, vol. 12, no. 3, pp. 328–330.
9. Mittova, I.Ya., Prokin, A.N., Gavryutin, V.N., Sukhochev, A.S., and Kashkarov, V.M., Solid-State Reactions Underlying the Thermal Oxidation of Ni/InP Structures, Neorg. Mater., 2001, vol. 37, no. 4, pp. 399–404 [Inorg. Mater. (Engl. transl.), 2001, vol. 37, no. 4, pp. 321–326].10.1023/A:1017559207252 ↗